參數(shù)資料
型號(hào)： AM41LV3204MT10IT
廠商： ADVANCED MICRO DEVICES INC
元件分類： 存儲(chǔ)器
英文描述： Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA69
封裝： 8 X 10 MM, 1.20 MM HEIGHT, FBGA-69
文件頁數(shù)： 25/67頁
文件大小： 484K
代理商： AM41LV3204MT10IT
24
Am41LV3204M
June 10, 2003
P R E L I M I N A R Y
Table 11.
Device Geometry Definition
Addresses
(x16)
Addresses
(x8)
Data
Description
27h
4Eh
0016h
Device Size = 2
N
byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0005h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
007Fh
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
003Eh
0000h
0000h
0001h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
相關(guān)PDF資料
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