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參數(shù)資料
| 型號： | AM41DL16X4D |
| 英文描述： | Am41DL16x4D - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| 中文描述： | Am41DL16x4D -堆疊式多芯片封裝（MCP）閃存和SRAM |
| 文件頁數(shù)： | 39/63頁 |
| 文件大?。?/td> | 1052K |
| 代理商： | AM41DL16X4D |
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38
Am41DL16x4D
P R E L I M I N A R Y
Notes:
1. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
2. Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
3. I
CC
active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
V
LKO
Flash Low V
CC
Lock-Out Voltage
(Note 5)
2.3
2.5
V
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
–
1.0
1.0
μA
I
LO
Output Leakage Current
CE1#s = V
IH
, CE2s = V
IL
or OE# =
V
IH
or WE# = V
IL
, V
IO
= V
SS
to V
CC
–
1.0
1.0
μA
I
CC1
s
Average Operating Current
Cycle time = 1 μs, 100% duty,
I
IO
= 0 mA, CE1#s
≤
0.2 V,
CE2
≥
V
CC
–
0.2 V, V
IN
≤
0.2 V or
V
IN
≥
V
CC
–
0.2 V
3
mA
I
CC2
s
Average Operating Current
Cycle time = Min., I
IO
= 0 mA,
100% duty, CE1#s = V
IL
, CE2s =
V
IH
, V
IN
= V
IL
= or V
IH
22
mA
V
OL
Output Low Voltage
I
OL
= 2.1 mA
0.4
V
V
OH
Output High Voltage
I
OH
=
–
1.0 mA
CE1#s
≥
V
CC
–
0.2 V, CE2
≥
V
CC
–
0.2 V (CE1#s controlled) or 0 V
≤
CE2
≤
0.2 V (CE2s controlled),
CIOs = V
SS
or V
CC
, Other input = 0
~ V
CC
2.4
V
I
SB1
Standby Current (CMOS)
10
μA
DC CHARACTERISTICS (Continued)
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
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