參數資料
型號： AM41DL16X4D
英文描述： Am41DL16x4D - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
中文描述： Am41DL16x4D -堆疊式多芯片封裝（MCP）閃存和SRAM
文件頁數： 25/63頁
文件大小： 1052K
代理商： AM41DL16X4D
24
Am41DL16x4D
P R E L I M I N A R Y
Table 13.
System Interface String
Table 14.
Device Geometry Definition
Addresses
(Word Mode)
Data
Description
1Bh
0027h
V
CC
Min. (write/erase)
D7
–
D4: volt, D3
–
D0: 100 millivolt
1Ch
0036h
V
CC
Max. (write/erase)
D7
–
D4: volt, D3
–
D0: 100 millivolt
1Dh
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
1Fh
0004h
Typical timeout per single byte/word write 2
N
μs
20h
0000h
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
21h
000Ah
Typical timeout per individual block erase 2
N
ms
22h
0000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
0005h
Max. timeout for byte/word write 2
N
times typical
24h
0000h
Max. timeout for buffer write 2
N
times typical
25h
0004h
Max. timeout per individual block erase 2
N
times typical
26h
0000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Addresses
(Word Mode)
Data
Description
27h
0016h
Device Size = 2
N
byte
28h
29h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
0002h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
003Eh
0000h
0000h
0001h
Erase Block Region 2 Information
35h
36h
37h
38h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
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AM41DL3208G 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
AM41DL3208GB25IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41DL3208GB30IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41DL3208GB35IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41DL3208GB40IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
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