參數(shù)資料
型號： Am29LV640DU121RZI
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
中文描述： 64兆位（4個M x 16位），3.0伏的CMOS只均勻部門閃光控制記憶與VersatileI
文件頁數(shù)： 38/57頁
文件大小： 1467K
代理商： AM29LV640DU121RZI
September 20, 2002
Am29LV640D/Am29LV641D
37
TEST CONDITIONS
Table 12.
Test Specifications
Note:
If V
IO
< V
CC
, the reference level is 0.5 V
IO
.
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
Note:
Diodes are IN3064 or equivalent
Figure 11.
Test Setup
Test Condition
90R,
101R
120R,
121R
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0
–
3.0
V
Input timing measurement
reference levels (See Note)
1.5
V
Output timing measurement
reference levels
0.5 V
IO
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don
’
t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
0.5 V
IO
V
Output
Measurement Level
Input
Note:
If V
IO
< V
CC
, the input measurement reference level is 0.5 V
IO
.
Figure 12.
Input Waveforms and
Measurement Levels
相關(guān)PDF資料
PDF描述
Am29LV640DU90RFEN 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV640DU90RFI Ceramic Conformally Coated / Radial &apos;Standard &amp; High Voltage Golden Max&apos;; Capacitance [nom]: 330pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-2%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100&quot; Lead Spacing; Body Dimensions: 0.150&quot; x 0.210&quot; x 0.130&quot;; Container: Bag; Qty per Container: 500
Am29LV640DU90RPCEN Ceramic Conformally Coated / Radial &apos;Standard &amp; High Voltage Golden Max&apos;; Capacitance [nom]: 330pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100&quot; Lead Spacing; Body Dimensions: 0.150&quot; x 0.210&quot; x 0.130&quot;; Container: Bag; Qty per Container: 500
AM29LV640DU90RPCI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
AM29LV640DU90RWHI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
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AM29LV640DU-90RWHIT 制造商:Advanced Micro Devices 功能描述:63-BALL FINE-PITCH BALL GRID ARRAY (FBGA) 0.80 MM PITCH, 11 X 12 MM PACKAGE (FBE063)
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