參數(shù)資料
型號: Am29LV640DU121RZI
廠商: Advanced Micro Devices, Inc.
英文描述: 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
中文描述: 64兆位(4個M x 16位),3.0伏的CMOS只均勻部門閃光控制記憶與VersatileI
文件頁數(shù): 37/57頁
文件大?。?/td> 1467K
代理商: AM29LV640DU121RZI
36
Am29LV640D/Am29LV641D
September 20, 2002
DC CHARACTERISTICS
Zero-Power Flash
Note:
Addresses are switching at 1 MHz
Figure 9.
I
CC1
Current vs. Time (Showing Active and Automatic Sleep Currents)
25
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
S
Time in ns
10
8
2
0
1
2
3
4
5
Frequency in MHz
S
Note:
T = 25
°
C
Figure 10.
Typical I
CC1
vs. Frequency
4
6
12
3.0 V
3.6 V
相關PDF資料
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Am29LV640DU90RFEN 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV640DU90RFI Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 330pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-2%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500
Am29LV640DU90RPCEN Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 330pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500
AM29LV640DU90RPCI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
AM29LV640DU90RWHI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
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