參數(shù)資料
型號： Am29LV640DU121RZI
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
中文描述： 64兆位（4個M x 16位），3.0伏的CMOS只均勻部門閃光控制記憶與VersatileI
文件頁數(shù)： 35/57頁
文件大?。?/td> 1467K
代理商： AM29LV640DU121RZI
34
Am29LV640D/Am29LV641D
September 20, 2002
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . .
–
65
°
C to +150
°
C
Ambient Temperature
with Power Applied . . . . . . . . . . . . .
–
65
°
C to +125
°
C
Voltage with Respect to Ground
V
CC
(Note 1) . . . . . . . . . . . . . . . . .
–
0.5 V to +4.0 V
V
IO
. . . . . . . . . . . . . . . . . . . . . . . . .
–
0.5 V to +5.5 V
A9
,
OE#, ACC, and
RESET#
(Note 2). . . . . . . . . . . . . . . . . . . .
–
0.5 V to +12.5 V
All other pins (Note 1). . . . . .
–
0.5 V to V
CC
+0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is
–
0.5 V.
During voltage transitions, input or I/O pins may
overshoot V
SS
to
–
2.0 V for periods of up to 20 ns.
Maximum DC voltage on input or I/O pins is V
CC
+0.5 V.
See Figure 7. During voltage transitions, input or I/O pins
may overshoot to V
CC
+2.0 V for periods up to 20 ns. See
Figure 8.
2. Minimum DC input voltage on pins A9, OE#, ACC, and
RESET# is
–
0.5 V. During voltage transitions, A9, OE#,
ACC, and RESET# may overshoot V
SS
to
–
2.0 V for
periods of up to 20 ns. See Figure 7. Maximum DC input
voltage on pin A9, OE#, ACC, and RESET# is +12.5 V
which may overshoot to +14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under
“
Absolute Maximum
Ratings
”
may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (T
A
) . . . . . . . . .
–
40
°
C to +85
°
C
Extended (E) Devices
Ambient Temperature (T
A
) . . . . . . . .
–
55
°
C to +125
°
C
Supply Voltages
V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0
–
3.6 V
V
IO
. . . . . . . . . . . . . . . . .either 1.8
–
2.9 V or 3.0
–
5.0 V
(see
Ordering Information
section)
Operating ranges define those limits between which the
functionality of the device is guaranteed.
20 ns
20 ns
+0.8 V
–
0.5 V
20 ns
–
2.0 V
Figure 7.
Maximum Negative
Overshoot Waveform
20 ns
20 ns
V
+2.0 V
V
+0.5 V
20 ns
2.0 V
Figure 8.
Overshoot Waveform
Maximum Positive
相關(guān)PDF資料
PDF描述
Am29LV640DU90RFEN 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV640DU90RFI Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 330pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-2%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500
Am29LV640DU90RPCEN Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 330pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500
AM29LV640DU90RPCI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
AM29LV640DU90RWHI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
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