參數(shù)資料
型號(hào): Am29LV400T-100SIB
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 4兆位(512畝x 8-Bit/256畝x 16位),3.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 28/40頁(yè)
文件大小: 516K
代理商: AM29LV400T-100SIB
Am29LV400
28
P R E L IM IN A R Y
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
-90R
-100
-120
-150
JEDEC
Std.
Description
Unit
t
ELFL/
t
ELFH
CE# to BYTE# Switching Low or High
Max
5
ns
t
FLQZ
BYTE# Switching Low to Output HIGH Z
Max
30
30
30
40
ns
t
FHQV
BYTE# Switching High to Output Active
Min
90
100
120
150
ns
DQ15
Output
Data Output
(DQ0–DQ7)
CE#
OE#
BYTE#
t
ELFL
DQ0–DQ14
Data Output
(DQ0–DQ14)
DQ15/A-1
Address
Input
t
FLQZ
BYTE#
Switching
from word
to byte
mode
DQ15
Output
Data Output
(DQ0–DQ7)
BYTE#
t
ELFH
DQ0–DQ14
Data Output
(DQ0–DQ14)
DQ15/A-1
Address
Input
t
FHQV
BYTE#
Switching
from byte
to word
mode
20514C-18
Figure 14.
BYTE# Timings for Read Operations
Note:
Refer to the Erase/Program Operations table for t
AS
and t
AH
specifications.
20514C-19
Figure 15.
BYTE# Timings for Write Operations
CE#
WE#
BYTE#
The falling edge of the last WE# signal
t
HOLD
(t
AH
)
t
SET
(t
AS
)
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