參數(shù)資料
型號: Am29LV400T-100SIB
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 4兆位(512畝x 8-Bit/256畝x 16位),3.0伏的CMOS只引導扇區(qū)閃存
文件頁數(shù): 26/40頁
文件大?。?/td> 516K
代理商: AM29LV400T-100SIB
Am29LV400
26
P R E L IM IN A R Y
AC CHARACTERISTICS
Read Operations
Notes:
1. Not 100% tested.
2. See Figure 10 and Table 7 for test specifications.
Parameter
Description
Speed Option
JEDEC
Std
Test Setup
-90R
-100
-120
-150
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
90
100
120
150
ns
t
AVQV
t
ACC
Address to Output Delay
CE# = V
IL
OE# = V
IL
Max
90
100
120
150
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
90
100
120
150
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
40
40
50
55
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
30
30
30
40
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
30
30
30
40
ns
t
OEH
Output Enable
Hold Time (Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First (Note 1)
Min
0
ns
t
CE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
t
ACC
t
RC
t
OEH
t
OE
0 V
RY/BY#
RESET#
t
DF
t
OH
20514C-16
Figure 12.
Read Operations Timings
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