參數(shù)資料
型號： Am29LV400T-100SIB
廠商： Advanced Micro Devices, Inc.
英文描述： 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 4兆位（512畝x 8-Bit/256畝x 16位），3.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁數(shù)： 25/40頁
文件大小： 516K
代理商： AM29LV400T-100SIB
25
Am29LV400
P R E L I M I N A R Y
TEST CONDITIONS
Table 7.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
20514C-14
Figure 10.
Test Setup
Note:
Diodes are IN3064 or equivalent
Test Condition
-90R,
-100
-120,
-150
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
KS000010-PAL
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Output
Measurement Level
Input
20514C-15
Figure 11.
Input Waveforms and Measurement Levels
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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