- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄298821 > AM29LV320DB120EE (SPANSION LLC) 2M X 16 FLASH 3V PROM, 120 ns, PDSO48 PDF資料下載
參數(shù)資料
| 型號： | AM29LV320DB120EE |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| 封裝： | TSOP-48 |
| 文件頁數(shù)： | 46/53頁 |
| 文件大小： | 1008K |
| 代理商： | AM29LV320DB120EE |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁當(dāng)前第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁
50
Am29LV320D
July 30, 2002
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 3.0 V V
CC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°C, V
CC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
14 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
CC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
1.6
15
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
112
sec
Byte Program Time
9
300
s
Excludes system level
overhead (Note 5)
Accelerated Byte/Word Program Time
7
210
s
Word Program Time
11
360
s
Chip Program Time
Byte Mode
36
108
sec
Word Mode
24
72
Description
Min
Max
Input voltage with respect to V
SS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS on all I/O pins
–1.0 V
V
CC + 1.0 V
V
CC Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN = 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT = 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN = 0
7.5
9
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C10
Years
125
°C20
Years
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV320DB120WME | 2M X 16 FLASH 3V PROM, 120 ns, PBGA48 |
| AM29LV640MH101EF | 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 |
| AM2D-11G | ACTIVE DELAY LINE, TRUE OUTPUT, PDSO8 |
| AI4D-4J | ACTIVE DELAY LINE, TRUE OUTPUT, PDSO14 |
| AM3D-11J | ACTIVE DELAY LINE, TRUE OUTPUT, PDSO8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV320DB120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP |
| AM29LV320DB120WMI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin FBGA |
| AM29LV320DB90EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
| AM29LV320DB90ED | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
| AM29LV320DB90EF | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。