參數(shù)資料
型號(hào)： AM29LV128ML93FI
廠商： Advanced Micro Devices, Inc.
英文描述： 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
中文描述： 128兆位（8 M中的x 16-Bit/16 M中的x 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一部門(mén)閃存與VersatileI內(nèi)存/ O控制
文件頁(yè)數(shù)： 46/65頁(yè)
文件大?。?/td> 1222K
代理商： AM29LV128ML93FI
44
Am29LV128MH/L
September 9, 2003
D A T A S H E E T
AC CHARACTERISTICS
Read-Only Operations
Notes:
1. Not 100% tested.
2. See Figure 12 and Table 13 for test specifications.
3. AC Specifications listed are tested with V
IO
= V
CC
. Contact AMD for information on AC operation with V
IO
≠
V
CC
.
Figure 14.
Read Operation Timings
Parameter
Description
Test Setup
Speed Options
JEDEC
Std.
93R
103,
103R
113
113R
123
123R
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE# = V
IL
Max
90
100
110
120
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
90
100
110
120
ns
t
PACC
Page Access Time
Max
25
30
30
40
30
40
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
25
30
30
40
30
40
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
16
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
16
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
t
OEH
Output Enable Hold Time
(Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
t
OH
t
CE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
t
RC
t
ACC
t
OEH
t
RH
t
OE
t
RH
0 V
RY/BY#
RESET#
t
DF
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PDF描述
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