參數(shù)資料
型號: AM29LV128MH123FI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
中文描述: 8M X 16 FLASH 3V PROM, 120 ns, PDSO56
封裝: REVERSE, MO-142B, TSOP-56
文件頁數(shù): 52/65頁
文件大?。?/td> 1222K
代理商: AM29LV128MH123FI
50
Am29LV128MH/L
September 9, 2003
D A T A S H E E T
AC CHARACTERISTICS
OE#
CE#
Addresses
V
CC
WE#
Data
2AAh
SA
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
t
RB
t
BUSY
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”.
2. These waveforms are for the word mode.
Figure 20.
Chip/Sector Erase Operation Timings
相關(guān)PDF資料
PDF描述
AM29LV128MH123PCI 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV128MH93EI 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV128ML113FI 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV128ML113PCI 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV128ML123EI CAP 33UF 63V ELECT LXY RAD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV128MH123REI 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 128Mbit 16M/8M x 8bit/16bit 120ns 56-Pin TSOP
AM29LV128MH123RPCI 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 128M-Bit 16M x 8/8M x 16 120ns 64-Pin Fortified BGA
AM29LV128ML113REI 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 128M-Bit 16M x 8/8M x 16 110ns 56-Pin TSOP
AM29LV128ML123REI 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 128M-Bit 16M x 8/8M x 16 120ns 56-Pin TSOP
AM29LV128ML-123REI 制造商:Advanced Micro Devices 功能描述:8M X 16 FLASH 3V PROM, 120 ns, PDSO56