參數(shù)資料
型號： AM29LV128MH123FI
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
中文描述： 8M X 16 FLASH 3V PROM, 120 ns, PDSO56
封裝： REVERSE, MO-142B, TSOP-56
文件頁數(shù)： 49/65頁
文件大小： 1222K
代理商： AM29LV128MH123FI
September 9, 2003
Am29LV128MH/L
47
D A T A S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation
5. Byte/Word programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
6. AC Specifications listed are tested with V
IO
= V
CC
. Contact AMD for information on AC operation with V
IO
≠
V
CC
.
Parameter
Speed Options
JEDEC
Std.
Description
93R
103, 103R
113, 113R 123, 123R Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
μs
Effective Write Buffer Program Operation
(Notes 2, 4)
Per Byte
Typ
7.5
μs
Per Word
Typ
15
μs
Accelerated Effective Write Buffer Program
Operation (Notes 2, 4)
Per Byte
Typ
6.25
μs
Per Word
Typ
12.5
μs
Single Byte Word
Program Operation (Note 2, 5)
Byte
Typ
60
μs
Word
Typ
60
μs
Accelerated Single Byte Word Programming
Operation (Note 2, 5)
Byte
Typ
54
μs
Word
Typ
54
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
VHH
V
HH
Rise and Fall Time (Note 1)
Min
250
ns
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
t
BUSY
Erase/Program Valid to RY/BY# Delay
Min
90
ns
相關(guān)PDF資料
PDF描述
AM29LV128MH123PCI 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV128MH93EI 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV128ML113FI 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV128ML113PCI 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV128ML123EI CAP 33UF 63V ELECT LXY RAD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV128MH123REI 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 128Mbit 16M/8M x 8bit/16bit 120ns 56-Pin TSOP
AM29LV128MH123RPCI 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 128M-Bit 16M x 8/8M x 16 120ns 64-Pin Fortified BGA
AM29LV128ML113REI 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 128M-Bit 16M x 8/8M x 16 110ns 56-Pin TSOP
AM29LV128ML123REI 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 128M-Bit 16M x 8/8M x 16 120ns 56-Pin TSOP
AM29LV128ML-123REI 制造商:Advanced Micro Devices 功能描述:8M X 16 FLASH 3V PROM, 120 ns, PDSO56
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