參數(shù)資料
型號(hào)： AM29LV128MH123FI
廠商： ADVANCED MICRO DEVICES INC
元件分類(lèi)： PROM
英文描述： 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
中文描述： 8M X 16 FLASH 3V PROM, 120 ns, PDSO56
封裝： REVERSE, MO-142B, TSOP-56
文件頁(yè)數(shù)： 3/65頁(yè)
文件大小： 1222K
代理商： AM29LV128MH123FI
DATASHEET
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
25270
Issue Date:
September 9, 2003
Rev:
C
Amendment/
2
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29LV128MH/L
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit
3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/O
Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■
Single power supply operation
— 3 volt read, erase, and program operations
■
VersatileI/O
control
— Device generates data output voltages and tolerates
data input voltages on the CE# and DQ
inputs/outputs as determined by the voltage on the
V
IO
pin; operates from 1.65 to 3.6 V
■
Manufactured on 0.23 μm MirrorBit process
technology
■
SecSi
(Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
■
Flexible sector architecture
— Two hundred fifty-six 32 Kword (64 Kbyte) sectors
■
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
■
Minimum 100,000 erase cycle guarantee per sector
■
20-year data retention at 125
°
C
PERFORMANCE CHARACTERISTICS
■
High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 15 s typical effective write buffer word programming
time: 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
■
Low power consumption (typical values at 3.0 V, 5
MHz)
— 13 mA typical active read current
— 50 mA typical erase/program current
— 1 μA typical standby mode current
■
Package options
— 56-pin TSOP
— 64-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
■
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word or byte programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
■
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Group Unprotect: V
ID
-level method
of changing code in locked sector groups
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV128MH123REI 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 128Mbit 16M/8M x 8bit/16bit 120ns 56-Pin TSOP
AM29LV128MH123RPCI 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 128M-Bit 16M x 8/8M x 16 120ns 64-Pin Fortified BGA
AM29LV128ML113REI 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 128M-Bit 16M x 8/8M x 16 110ns 56-Pin TSOP
AM29LV128ML123REI 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 128M-Bit 16M x 8/8M x 16 120ns 56-Pin TSOP
AM29LV128ML-123REI 制造商:Advanced Micro Devices 功能描述:8M X 16 FLASH 3V PROM, 120 ns, PDSO56
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