型號(hào): | AM29F200B-150FE |
英文描述: | A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in ; A IRF6609 with Standard Tape and Reel Quantity of 4800 |
中文描述: | x8/x16閃存EEPROM |
文件頁數(shù): | 5/39頁 |
文件大?。?/td> | 728K |
代理商: | AM29F200B-150FE |
相關(guān)PDF資料 |
PDF描述 |
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AM29F200B-150FEB | x8/x16 Flash EEPROM |
AM29F200B-150FI | 80V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU3418 with Standard Packaging |
AM29F200B-150SC | A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package. Recommended replacement is IRF6621; A IRF6608 with Standard Tape and Reel Quantity |
AM29F200B-150SE | 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL540N with Standard Packaging |
AM29F200B-150SEB | 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL3103 with Standard Packaging |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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AM29F200BB-120EC | 制造商:Advanced Micro Devices 功能描述: |
AM29F200BB-120SI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 44-Pin SOIC |
AM29F200BB-120SI\T | 制造商:Spansion 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 120ns 44-Pin SOIC T/R |
AM29F200BB-45SI | 制造商:Advanced Micro Devices 功能描述: |
AM29F200BB-55EF | 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |