- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362243 > AM29F200B-150FE A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in ; A IRF6609 with Standard Tape and Reel Quantity of 4800 PDF資料下載
參數(shù)資料
| 型號： | AM29F200B-150FE |
| 英文描述： | A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in ; A IRF6609 with Standard Tape and Reel Quantity of 4800 |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁數(shù)： | 27/39頁 |
| 文件大小： | 728K |
| 代理商： | AM29F200B-150FE |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁當前第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁
Am29F002B/Am29F002NB
27
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2.
See the “Erase and Programming Performance” section for more information.
Parameter
Speed Options
JEDEC
Std
Description
-55
-70
-90
-120
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
55
70
90
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
WLAX
t
AH
Address Hold Time
Min
45
45
45
50
ns
t
DVWH
t
DS
Data Setup Time
Min
25
30
45
50
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OES
Output Enable Setup Time
Min
0
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
30
35
45
50
ns
t
WHWL
t
WPH
Write Pulse Width High
Min
20
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Typ
7
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
1
sec
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
相關PDF資料 |
PDF描述 |
|---|---|
| AM29F200B-150FEB | x8/x16 Flash EEPROM |
| AM29F200B-150FI | 80V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU3418 with Standard Packaging |
| AM29F200B-150SC | A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package. Recommended replacement is IRF6621; A IRF6608 with Standard Tape and Reel Quantity |
| AM29F200B-150SE | 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL540N with Standard Packaging |
| AM29F200B-150SEB | 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL3103 with Standard Packaging |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F200BB-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-120SI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 44-Pin SOIC |
| AM29F200BB-120SI\T | 制造商:Spansion 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 120ns 44-Pin SOIC T/R |
| AM29F200BB-45SI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-55EF | 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。