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參數(shù)資料
| 型號(hào)： | AM29F200B-150FE |
| 英文描述： | A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in ; A IRF6609 with Standard Tape and Reel Quantity of 4800 |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁(yè)數(shù)： | 23/39頁(yè) |
| 文件大小： | 728K |
| 代理商： | AM29F200B-150FE |
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Am29F002B/Am29F002NB
23
DC CHARACTERISTICS
CMOS Compatible
Notes:
1. RESET# is not available on Am29F002NB.
2. Maximum I
CC
specifications are tested with V
CC
= V
CCmax
.
3. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
4. I
CC
active while Embedded Erase or Embedded Program is in progress.
5. Not 100% tested.
6. I
CC3
and I
CC4
= 20 μA max at extended temperature (>+85
°
C).
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9, OE#, RESET#
Input Load Current (Notes 1, 5)
V
CC
= V
CC max
;
A9, OE#, RESET# = 12.5 V
50
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
±
1.0
μA
I
CC1
V
CC
Active Read Current
(Notes 2, 3)
CE# = V
IL
,
OE#
= V
IH
20
30
mA
I
CC2
V
CC
Active Write Current
(Notes 2, 4, 5)
CE# = V
IL
,
OE# = V
IH
30
40
mA
I
CC3
V
CC
Standby Current
(Notes 2, 6)
CE# = V
CC
±
0.5 V
1
5
μA
I
CC4
V
CC
Reset Current
(Notes 1, 2, 6)
RESET# = V
IL
1
5
μA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7 x V
CC
V
CC
+ 0.3
V
V
ID
Voltage for Autoselect and
Temporary Sector Unprotect
V
CC
= 5.0 V
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 12 mA, V
CC
= V
CC min
0.45
V
V
OH1
Output High Voltage
I
OH
= –2.5 mA, V
CC
= V
CC min
0.85 V
CC
V
V
OH2
I
OH
= –100 μA, V
CC
= V
CC min
V
CC
–0.4
V
LKO
Low V
CC
Lock-Out Voltage
3.2
4.2
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F200B-150FEB | x8/x16 Flash EEPROM |
| AM29F200B-150FI | 80V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU3418 with Standard Packaging |
| AM29F200B-150SC | A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package. Recommended replacement is IRF6621; A IRF6608 with Standard Tape and Reel Quantity |
| AM29F200B-150SE | 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL540N with Standard Packaging |
| AM29F200B-150SEB | 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL3103 with Standard Packaging |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F200BB-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-120SI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 44-Pin SOIC |
| AM29F200BB-120SI\T | 制造商:Spansion 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 120ns 44-Pin SOIC T/R |
| AM29F200BB-45SI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-55EF | 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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