參數(shù)資料
型號： AM29F100AT-70EC
英文描述： x8/x16 Flash EEPROM
中文描述： x8/x16閃存EEPROM
文件頁數(shù)： 31/39頁
文件大小： 728K
代理商： AM29F100AT-70EC
Am29F002B/Am29F002NB
31
AC CHARACTERISTICS
Enter
Embedded
Erasing
Temporary Sector Unprotect (Am29F002B only)
Note:
Not 100% tested.
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
Note:
The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
Figure 15.
DQ2 vs. DQ6
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
RESET#
t
VIDR
12 V
0 or 5 V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
0 or 5 V
Figure 16.
Temporary Sector Unprotect Timing Diagram (Am29F002B only)
相關(guān)PDF資料
PDF描述
AM29F100AT-70EE A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 55 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; A IRF6621 with Standard Tape and Reel Quantity of 4800
AM29F100AT-70EI x8/x16 Flash EEPROM
AM29F100AT-70FC x8/x16 Flash EEPROM
AM29F100AT-70FE 30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; Similar to IRLI3803 with Lead Free Packaging
AM29F100AT-70FI x8/x16 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F100B120EC 制造商:AMD 功能描述:*
AM29F100B-120EC 制造商:Advanced Micro Devices 功能描述:
AM29F100B120SC 制造商:AMD 功能描述:New
AM29F100B-120SC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 64K x 16, 44 Pin, Plastic, SOP
AM29F100B90SIT 制造商:AMD 功能描述:New
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