參數(shù)資料
    型號(hào): AM29F100AT-70EE
    英文描述: A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 55 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; A IRF6621 with Standard Tape and Reel Quantity of 4800
    中文描述: x8/x16閃存EEPROM
    文件頁(yè)數(shù): 1/39頁(yè)
    文件大?。?/td> 728K
    代理商: AM29F100AT-70EE
    This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
    Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
    Publication#
    21527
    Issue Date:
    November 28, 2000
    Rev:
    D
    Amendment/
    0
    Am29F002B/Am29F002NB
    2 Megabit (256 K x 8-Bit)
    CMOS 5.0 Volt-only Boot Sector Flash Memory
    DISTINCTIVE CHARACTERISTICS
    I
    Single power supply operation
    — 5.0 Volt-only operation for read, erase, and
    program operations
    — Minimizes system level requirements
    I
    Manufactured on 0.32 μm process technology
    — Compatible with 0.5 μm Am29F002 device
    I
    High performance
    — Access times as fast as 55 ns
    I
    Low power consumption (typical values at
    5 MHz)
    — 1 μA standby mode current
    — 20 mA read current
    — 30 mA program/erase current
    I
    Flexible sector architecture
    — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
    three 64 Kbyte sectors
    — Supports full chip erase
    — Sector Protection features:
    A hardware method of locking a sector to
    prevent any program or erase operations within
    that sector
    Sectors can be locked via programming equipment
    Temporary Sector Unprotect feature allows code
    changes in previously locked sectors
    I
    Top or bottom boot block configurations available
    I
    Embedded Algorithms
    — Embedded Erase algorithm automatically
    preprograms and erases the entire chip or any
    combination of designated sectors
    — Embedded Program algorithm automatically
    writes and verifies data at specified addresses
    I
    Minimum 1,000,000 write cycle guarantee per
    sector
    I
    20-year data retention at 125
    °
    C
    — Reliable operation for the life of the system
    I
    Package option
    — 32-pin PDIP
    — 32-pin TSOP
    — 32-pin PLCC
    I
    Compatibility with JEDEC standards
    — Pinout and software compatible with
    single-power supply Flash
    — Superior inadvertent write protection
    I
    Data# Polling and toggle bits
    — Provides a software method of detecting
    program or erase operation completion
    I
    Erase Suspend/Erase Resume
    — Suspends an erase operation to read data from,
    or program data to, a sector that is not being
    erased, then resumes the erase operation
    I
    Hardware reset pin (RESET#)
    — Hardware method to reset the device to reading
    array data (not available on Am29F002NB)
    相關(guān)PDF資料
    PDF描述
    AM29F100AT-70EI x8/x16 Flash EEPROM
    AM29F100AT-70FC x8/x16 Flash EEPROM
    AM29F100AT-70FE 30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; Similar to IRLI3803 with Lead Free Packaging
    AM29F100AT-70FI x8/x16 Flash EEPROM
    AM29F100AT-70SC 30V Single N-Channel HEXFET Power MOSFET in a SOT-223 package; A IRLL3303 with Standard Packaging
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    AM29F100B120EC 制造商:AMD 功能描述:*
    AM29F100B-120EC 制造商:Advanced Micro Devices 功能描述:
    AM29F100B120SC 制造商:AMD 功能描述:New
    AM29F100B-120SC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 64K x 16, 44 Pin, Plastic, SOP
    AM29F100B90SIT 制造商:AMD 功能描述:New