參數(shù)資料
型號: AM29F100AT-70EC
英文描述: x8/x16 Flash EEPROM
中文描述: x8/x16閃存EEPROM
文件頁數(shù): 22/39頁
文件大?。?/td> 728K
代理商: AM29F100AT-70EC
22
Am29F002B/Am29F002NB
DC CHARACTERISTICS
TTL/NMOS Compatible
Notes:
1. RESET# is not available on Am29F002NB.
2. Maximum I
CC
specifications are tested with V
CC
= V
CCmax
.
3. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
4. I
CC
active while Embedded Erase or Embedded Program is in progress.
5. Not 100% tested.
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9, OE#, RESET# Input Load Current
(Notes 1, 5)
V
CC
= V
CC max
;
A9, OE#, RESET# = 12.5 V
50
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC max
±
1.0
μA
I
CC1
V
CC
Active Read Current (Notes 2, 3)
CE# = V
IL
,
OE#
=
V
IH
20
30
mA
I
CC2
V
CC
Active Write Current (Notes 2, 4, 5) CE# = V
IL
, OE# = V
IH
30
40
mA
I
CC3
V
CC
Standby Current (Note 2)
CE#, OE# = V
IH
0.4
1
mA
I
CC4
V
CC
Reset Current (Notes 1, 2)
RESET# = V
IL
0.4
1
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
2.0
V
CC
+ 0.5
V
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
V
CC
= 5.0 V
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 12 mA, V
CC
= V
CC min
0.45
V
V
OH
Output High Voltage
I
OH
= –2.5 mA, V
CC
= V
CC min
2.4
V
V
LKO
Low V
CC
Lock-Out Voltage
3.2
4.2
V
相關(guān)PDF資料
PDF描述
AM29F100AT-70EE A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 55 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; A IRF6621 with Standard Tape and Reel Quantity of 4800
AM29F100AT-70EI x8/x16 Flash EEPROM
AM29F100AT-70FC x8/x16 Flash EEPROM
AM29F100AT-70FE 30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; Similar to IRLI3803 with Lead Free Packaging
AM29F100AT-70FI x8/x16 Flash EEPROM
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