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參數(shù)資料
| 型號： | Am29F016D-120EEB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | TOOL EXTRACTION #4 CONTACT METAL |
| 中文描述： | 16兆位（2米× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體 |
| 文件頁數(shù)： | 44/45頁 |
| 文件大?。?/td> | 1145K |
| 代理商： | AM29F016D-120EEB |
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Am29F016D
REVISION SUMMARY
Revision A (May 1997)
Initial release of Am29F016B (0.35 μm) device.
Revision B (January 1998)
Global
Made formatting and layout consistent with other data
sheets. Used updated common tables and diagrams.
Revision B+1 (January 1998)
AC Characteristics—Read-only Operations
Deleted note referring to output driver disable time.
Figure 16—Temporary Sector Group Unprotect
Timings
Corrected title to indicate “sector group.”
Revision B+2 (April 1998)
Global
Added -70 speed option, deleted -75 speed option.
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
Ordering Information
Added extended temperature availability to -90, -120,
and -150 speed options.
Operating Ranges
Added extended temperature range.
DC Characteristics, CMOS Compatible
Corrected the CE# and RESET# test conditions for
I
CC3
and I
CC4
to V
CC
±0.5 V.
AC Characteristics
Erase/Program Operations; Erase and Program Oper-
ations Alternate CE# Controlled Writes:
Corrected the
notes reference for t
WHWH1
and t
WHWH2
. These param-
eters are 100% tested. Corrected the note reference for
t
VCS
. This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Revision C (January 1999)
Global
Updated for CS39S process technology.
Distinctive Characteristics
Added:
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
DC Characteristics—CMOS Compatible
I
CC3
, I
CC4
: Added Note 4, “For CMOS mode only I
CC3
,
I
CC4
= 20 μA at extended temperature (>+85°C)”.
DC Characteristics—TTL/NMOS Compatible and
CMOS Compatible
I
CC1
, I
CC2
, I
CC3
, I
CC4
: Added Note 2 “Maximum I
CC
specifications are tested with V
CC
= V
CCmax
”.
I
CC3
,
I
CC4
: Deleted V
CC
= V
CC
Max.
Revision C+1 (March 23, 1999)
Operating Ranges
The temperature ranges are now specified as ambient.
Revision C+2 (May 17, 1999)
Product Selector Guide
Corrected the t
OE
specification for the -150 speed op-
tion to 55 ns.
Operating Ranges
V
CC
Supply Voltages
: Added “V
CC
for ± 5% devices .
+4.75 V to +5.25 V”.
Revision C+3 (July 2, 1999)
Global
Added references to availability of device in Known
Good Die (KGD) form.
Revision D (November 16, 1999)
AC Characteristics—Figure 11. Program
Operations Timing and Figure 12. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
相關PDF資料 |
PDF描述 |
|---|---|
| Am29F016D-70EIB | BLADE #2 ANGLE PREC CUT 5PC/BAG |
| Am29F016D-90EIB | BLADE #11 STAINLESS STEEL 5PC |
| Am29F016D-120EIB | BLADE #24 ANGLE DEBURRING 5PC |
| Am29F016D-150EIB | MAGNIFIER DBL CLAMP W/STAND |
| Am29F016D-120FIB | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F016D-120EI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 120ns 48-Pin TSOP |
| AM29F016D120FI | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 120ns 48-Pin RTSOP |
| am29f016d-150e4c | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Advanced Micro Devices 功能描述: 制造商:AMD 功能描述: |
| AM29F016D-150EC | 制造商:Spansion 功能描述:16M (2MX8) 5V, UNIFORM SECTOR, TSOP48, COM - Trays |
| AM29F016D-70E4D | 制造商:SOCO 功能描述: |
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