參數(shù)資料
型號: AM29F016-75SI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: LM3311 Step-Up PWM DC/DC Converter with Integrated LDO, Op-Amp, and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 1000; Container: Reel
中文描述: 2M X 8 FLASH 5V PROM, 70 ns, PDSO44
封裝: SOP-44
文件頁數(shù): 36/36頁
文件大?。?/td> 219K
代理商: AM29F016-75SI
36
Am29F016
PHYSICAL DIMENSIONS
TSR048
48-Pin Reversed Thin Small Outline Package
Trademarks
Copyright 1997 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies
48
25
1
24
18.30
18.50
19.80
20.20
11.90
12.10
SEATING PLANE
0.05
0.15
0.50 BSC
0.95
1.05
16-038-TS48
TSR048
DA104
8-8-94 ae
Pin 1 I.D.
1.20
MAX
0.50
0.70
0.10
0.21
0.25MM (0.0098") BSC
0
°
5
°
0.08
0.20
相關(guān)PDF資料
PDF描述
AM29F016-75SIB LM3311 Step-Up PWM DC/DC Converter with Integrated LDO, Op-Amp, and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel
AM29F016-75FIB 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F016-90 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F016B-120DGC1 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
AM29F016B-120DPC1 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F016-90EC 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 48-Pin TSOP
AM29F016B-120DGC1 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 120NS DIE - Gel-pak, waffle pack, wafer, diced wafer on film
AM29F016B-120DPC1 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 120ns Die
AM29F016B120EC 制造商:Advanced Micro Devices 功能描述:
AM29F016B-120EC 制造商:Advanced Micro Devices 功能描述: