參數(shù)資料
型號(hào): AM29F016-75SI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: LM3311 Step-Up PWM DC/DC Converter with Integrated LDO, Op-Amp, and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 1000; Container: Reel
中文描述: 2M X 8 FLASH 5V PROM, 70 ns, PDSO44
封裝: SOP-44
文件頁(yè)數(shù): 33/36頁(yè)
文件大?。?/td> 219K
代理商: AM29F016-75SI
Am29F016
33
18805D-24
Figure 18.
Alternate CE Controlled Program Operation Timing
D
OUT
PD
t
AH
Data Polling
t
DS
t
WS
t
CPH
t
DH
t
CP
t
GHEL
Addresses
WE
OE
CE
Data
5.0 Volt
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ7 is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
t
WC
t
AS
DQ7
5555H
PA
A0H
t
WHWH1
PA
相關(guān)PDF資料
PDF描述
AM29F016-75SIB LM3311 Step-Up PWM DC/DC Converter with Integrated LDO, Op-Amp, and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel
AM29F016-75FIB 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F016-90 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F016B-120DGC1 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
AM29F016B-120DPC1 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
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