參數(shù)資料
型號(hào)： AM29F016-75SI
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： LM3311 Step-Up PWM DC/DC Converter with Integrated LDO, Op-Amp, and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 1000; Container: Reel
中文描述： 2M X 8 FLASH 5V PROM, 70 ns, PDSO44
封裝： SOP-44
文件頁數(shù)： 25/36頁
文件大?。?/td> 219K
代理商： AM29F016-75SI
Am29F016
25
AC CHARACTERISTICS
Read-only Operations Characteristics
Notes:
1. Test Conditions (for -75):
Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level: 1.5 V input and
output
2. Test Conditions (for all others):
Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 20 ns
Input pulse levels: 0.45 V to 2.4 V
Timing measurement reference level: 0.8 V and 2.0 V
input and output
3. Output driver disable time.
4. Not 100% tested.
Parameter Symbol
Parameter Description
Test Setup
Speed Options (Notes 1 and 2)
Unit
JEDEC Standard
-75
-90
-120
-150
t
AVAV
t
RC
Read Cycle Time 4
Min
70
90
120
150
ns
t
AVQV
t
ACC
Address to Output Delay
CE = V
IL
OE = V
IL
Max
70
90
120
150
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE = V
IL
Max
70
90
120
150
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
40
40
50
55
ns
t
EHQZ
t
DF
Chip Enable to Output High Z
(Notes 3, 4)
Max
20
20
30
35
ns
t
GHQZ
t
DF
Output Enable to Output High Z
(Notes 3, 4)
Max
20
20
30
35
ns
t
AXQX
t
OH
Output Hold Time From Addresses CE
or
OE Whichever Occurs First
Min
0
0
0
0
ns
t
Ready
RESET Pin Low to Read Mode
4
Max
20
20
20
20
μ
s
18805D-11
Figure 7.
Test Conditions
2.7 k
Diodes = IN3064
or Equivalent
C
L
6.2 k
5.0 Volt
IN3064
or Equivalent
Note:
C
L
(for -75) = 30 pF including jig capacitance
C
L
(for all others) = 100 pF including jig capacitance
Device
Under
Test
相關(guān)PDF資料
PDF描述
AM29F016-75SIB LM3311 Step-Up PWM DC/DC Converter with Integrated LDO, Op-Amp, and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel
AM29F016-75FIB 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F016-90 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F016B-120DGC1 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
AM29F016B-120DPC1 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
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參數(shù)描述
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AM29F016B-120DGC1 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 120NS DIE - Gel-pak, waffle pack, wafer, diced wafer on film
AM29F016B-120DPC1 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 120ns Die
AM29F016B120EC 制造商:Advanced Micro Devices 功能描述:
AM29F016B-120EC 制造商:Advanced Micro Devices 功能描述:
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