參數(shù)資料
型號(hào)： AH225-S8G
廠商： TRIQUINT SEMICONDUCTOR INC
元件分類(lèi)： 放大器
英文描述： 400 MHz - 2700 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝： HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, MS-012, SOIC-8
文件頁(yè)數(shù)： 12/21頁(yè)
文件大?。?/td> 1678K
代理商： AH225-S8G
AH225
1W High Linearity InGaP HBT Amplifier
Data Sheet: Rev D 01/26/11
- 2 of 21 -
Disclaimer: Subject to change without notice
2010 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network
Specifications
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
-65 to 150 °C
RF Input Power, CW, 50, T=25°C
+26 dBm
Device Voltage,Vcc, Vbias
+8 V
Device Current
900 mA
Device Power
+5 W
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Recommended Operating Conditions
Parameter
Min Typ
Max Units
Vcc
+4.5
+5
+5.25
V
Tcase
-40
+85
°C
TJ (for >106 hours MTTF)
+200
°C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: Vcc = +5 V, Icq = 300 mA, T = +25
°C, in a tuned application circuit.
Parameter
Conditions
Min
Typical
Max
Units
Operational Frequency Range
400
2700
MHz
Test Frequency
2140
MHz
Gain
15.5
dB
Input Return Loss
18
dB
Output Return Loss
9.4
dB
Output P1dB
+31.2
dBm
Output IP3
See Note 1
+46
dBm
WCDMA Channel Power at -50 dBc ACLR
See Note 2
+21.3
dBm
Noise Figure
6
dB
Vcc, Vbias
+5
V
Quiescent Current, Icq
See Note 3
300
mA
Iref
15
mA
Thermal Resistance (jnc. to case)
jc
35
°C/W
Notes:
1. 3OIP measured with two tones at an output power of +19 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product
is used to calculate the 3OIP using a 2:1 rule. 2:1 rule gives relative value w.r.t. fundamental tone.
2. 3GPP WCDMA, 1±64DPCH, ±5 MHz, no clipping, PAR = 10.2 dB at 0.01% Probability.
3. This corresponds to the quiescent collector current or operating current under small-signal conditions into pins 6 and 7.
Performance Summary Table
Test conditions unless otherwise noted: Vcc = +5 V, Icq = 300 mA, T = +25
°C, in an application circuit tuned for each frequency.
Frequency
750
940
1500
1840
1960
2140
2600 MHz
Gain
20.1
19.8
17
15.1
15.4
15.2
13.2
dB
Input Return Loss
14.5
10.5
17.2
11
15.4
18
19.4
dB
Output Return Loss
7
8.4
11
10.7
8.3
9.4
5.5
dB
Output P1dB
+30.4
+31
+31.3
+30.7
+31.3
+31
+30.5
dBm
Output IP3 [See note 4]
+45
+47.3
+48
+46
+53.6
+47
+48.7
dBm
WCDMA Channel Power at -50 dBc ACLR
+21.2
+21.7
+22
+21.6
+21.7
+21.4
+21.3
dBm
Notes:
4. OIP3 is measured with two tones at an output power of 20 dBm/tone for 750 MHz, 22 dBm/tone for 940 MHz and 19 dBm/tone for 1490,
1840, 1960, 2140, 2600 MHz application circuits respectively.
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AH225-S8PCB1960 功能描述:射頻放大器 1930-1960MHz 1W Eval Board RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類(lèi)型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
AH225-S8PCB2140 功能描述:射頻放大器 2110-2170MHz 1W Eval Board RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類(lèi)型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
AH225-S8PCB900 功能描述:射頻放大器 920-960MHz 1W Eval Board RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類(lèi)型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
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