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參數(shù)資料
| 型號： | AH125-89G |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 放大器 |
| 英文描述： | 400 MHz - 3600 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | GREEN, TO-243C, SOT-89, 3 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 1145K |
| 代理商： | AH125-89G |
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 3 of 12 April 2010
AH125
W High Linearity InGaP HBT Amplifier
700-800 MHz Reference Design
802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels, 5 MHz Carrier BW
Typical O-FDMA Performance at 25
°C
Frequency
700
750
800
MHz
Gain
20.4
20.3
20.1
dB
Input Return Loss
12
17
25
dB
Output Return Loss
7.5
6.8
6.3
dB
EVM
Pout=+18 dBm
0.9
0.7
%
ACLR
Pout=+18 dBm
-52.6
-56
-54.4
dBc
Output P1dB
+28.9 +29.4 +29.2 dBm
Output IP3
Pout=+18 dBm/tone, 1MHz spacing
+43.7 +46.2 +45.5 dBm
Quiescent Current, Icq
150
mA
Vcc
+5
V
Notes:
1.
The primary RF microstrip line is 50 Ω.
2.
Components shown on the silkscreen but not on the schematic are not used.
3.
0 Ω jumpers can be replaced with copper trace in target application.
4.
The edge of C11 is placed at 40 mil from AH125 RFout pin. (1.7o @ 750 MHz)
5.
The edge of R3 is placed at 210 mil from the edge of C11. (8.7o @ 750 MHz)
6.
The edge of C9 is placed next to the edge of R3.
7.
The edge of R1 is placed at 100 mil from AH125 RFin pin. (4.2o @ 750 MHz)
8.
The edge of C10 is placed 250 mil from the edge of R1. (10.4o @ 750 MHz)
17
18
19
20
21
22
700
720
740
760
780
800
Ga
in
(dB
)
Frequency (MHz)
Gain vs. Frequency
-30
-25
-20
-15
-10
-5
0
700
720
740
760
780
800
Ret
u
rn
L
o
ss
(d
B
)
Frequency (MHz)
Return Loss
S11
S22
30
35
40
45
50
10
12
14
16
18
20
OI
P
3
(
d
B
m
)
Output Power/Tone (dBm)
OIP3 vs. Output Power/Tone
700 MHz
750 MHz
800 MHz
0
1
2
3
4
5
15
16
17
18
19
20
21
22
EVM
(
%
)
Output Power (dBm)
EVM vs. Output Power
700 MHz
750 MHz
800 MHz
802.16-2004 O-FDMA, 64QAM-
1/2, 1024-FFT, 20 symbols and 30
subchannels, 5 MHz Carrier BW
-65
-60
-55
-50
-45
-40
15
16
17
18
19
20
ACL
R
(
d
Bc)
Output Power (dBm)
ACLR vs. Output Power
700 MHz
750 MHz
800 MHz
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7 dB @ 0.01% Probability
3.84 MHz BW
Note: For improved output return loss, ≥10dB, please contact TriQuint applications support for a reference design employing feedback. Corresponding OIP3
performance will be ~+43dBm.
TLEAD=+25°C
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