參數(shù)資料
型號: AH125-89G
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 放大器
英文描述: 400 MHz - 3600 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: GREEN, TO-243C, SOT-89, 3 PIN
文件頁數(shù): 11/12頁
文件大?。?/td> 1145K
代理商: AH125-89G
TriQuint Semiconductor, Inc
Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 8 of 12 April 2010
AH125
W High Linearity InGaP HBT Amplifier
2010-2025 MHz Reference Design
TD-SCDMA 3 Carrier, PAR = 10 dB @ 0.01% Probability, 1.28 MHz BW
Typical TD-SCDMA Performance at 25
°C
Frequency
2010
2015
2025 MHz
Gain
16.3
16.4
dB
Input Return Loss
12.6
13.1
14.4
dB
Output Return Loss
8.2
8.1
7.9
dB
ACLR
Pout=+16 dBm
-49.5
-50
-50.1
dBc
Output P1dB
+28 +28.3 +28
dBm
Output IP3
Pout=+10 dBm/tone, 1MHz spacing
+45
dBm
Quiescent Current, Icq
150
mA
Vcc
+5
V
C3
C4
C2
R2
R4
L1
R1
C1
C9
C1
0
C8
C9
C10
C20
R20
Notes:
1.
The primary RF microstrip line is 50
Ω.
2.
Components shown on the silkscreen but not on the schematic are not used.
3.
0
Ω jumpers can be replaced with copper trace in target application.
4.
The edge of C9 is placed at 120 mil from AH125 RFout pin. (13.4o @ 2015 MHz)
5.
The edge of C2 is placed 275 mil from the edge of C9. (30.7o @ 2015 MHz)
6.
The edge of C10 is placed at 60 mil from AH125 RFin pin. (6.7o @ 2015 MHz)
7.
The edge of R1 is placed next to the edge of C10.
14
15
16
17
18
19
2010
2015
2020
2025
2030
Ga
in
(dB
)
Frequency (MHz)
Gain vs. Frequency
-25
-20
-15
-10
-5
0
2010
2015
2020
2025
2030
Retu
rn
L
o
s
(d
B
)
Frequency (MHz)
Return Loss
S11
S22
-65
-60
-55
-50
-45
-40
-35
10
12
14
16
18
20
ACL
R
(d
Bc)
Output Power (dBm)
ACLR vs. Output Average Power
2010 MHz
2015 MHz
2025 MHz
30
35
40
45
50
9
10
11
121314151617
OI
P
3
(
d
B
m
)
Output Power/Tone (dBm)
OIP3 vs. Output Power per Tone
2010 MHz
2015 MHz
2.7 GHz
140
160
180
200
220
240
260
280
300
320
10
12
14
16
18
20
22
24
26
28
30
C
o
ll
e
c
to
rC
u
rr
e
n
t
(m
A
)
Output Power (dBm)
Collector Current vs Output Power
20
22
24
26
28
30
32
4
6
8
10
12
14
16
Outp
ut
P
o
w
e
r
(dBm
)
Input Power (dBm)
Output Power vs. Input Power
P1dB=+28.3 dBm
TLEAD=+25°C
1 MHz tone spacing
TLEAD=+25°C
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