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參數(shù)資料
| 型號： | AGR26045EF |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-2 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 248K |
| 代理商： | AGR26045EF |
APTGT100DU170T
A
P
T
G
T
100
D
U
170
T
–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
25
50
75
100
125
150
175
200
0
0.5
11.5
22.533.5
4
VCE (V)
I C
(A
)
Output Characteristics
VGE=15V
VGE=13V
VGE=20V
VGE=9V
0
40
80
120
160
200
012
345
VCE (V)
I C
(A
)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
0
25
50
75
100
125
150
175
200
5
6
7
8
9
10
11
12
13
VGE (V)
I C
(A
)
Energy losses vs Collector Current
Eon
Eoff
Er
0
20
40
60
80
100
0
25
50
75 100 125 150 175 200
IC (A)
E
(
m
J
)
VCE = 900V
VGE = 15V
RG = 4.7
TJ = 125°C
Eon
Eoff
Er
0
12.5
25
37.5
50
62.5
75
87.5
100
0
5
10
15
20
25
30
35
40
Gate Resistance (ohms)
E
(
m
J)
VCE = 900V
VGE =15V
IC = 100A
TJ = 125°C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
50
100
150
200
250
0
400
800
1200
1600
2000
VCE (V)
I C
(A
)
VGE=15V
TJ=125°C
RG=4.7
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
er
m
a
lI
m
p
ed
a
n
ce
(
°C
/W
)
IGBT
相關PDF資料 |
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|---|---|
| AGR26045EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR26125EU | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR26180EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR26180EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR26180EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AGR26125E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR26125EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR26125EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR26180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR34006827 | 制造商:LG Corporation 功能描述:Pipe Assembly,Telescopic |
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