- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36682 > AGR26045EF UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | AGR26045EF |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-2 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 248K |
| 代理商： | AGR26045EF |
Agere Systems Inc.
3
Preliminary Data Sheet
AGR26045EF
June 2004
45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR26045EF
A. Schematic
Parts List:
■
Microstrip line: Z1 0.496 in. x 0.066 in.; Z2 0.235 in. x 0.066 in.; Z3 0.200 in. x 0.090 in.; Z4 0.142 in. x 0.090 in.; Z5 0.215 in. x 0.090 in.;
Z6 0.320 in. x 0.470 in.; Z7 0.410 in. x 0.050 in.; Z8 0.155 in. x 0.170 in.; Z9 0.470 in. x 0.330 in.; Z10 0.670 in. x 0.050 in.;
Z11 0.530 in. x 0.066 in.; Z12 0.670 in. x 0.066 in.
■
ATC chip capacitor: C1, C2, C5, C6: 4.7 pF 100B47_J500; C11: 0.1 pF 100A0R1J_500; C12: 1.5 pF 100A15JW; C13 0.3 pF 100B0R3BW.
■
Murata 0805 capacitor: C8: 0.1 F.
■
Vitramon 1206 size capacitor C3, C7: 22000 pF.
■
1206 size chip resistor: R1; 12
.
■
Fair-Rite ferrite bead FB1: 2743018447.
■
Kemet capacitor: C4, C10: 22 F, 35 V; C9: 0.1 F 1206 case.
■
Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness,
εr = 3.5.
B. Component Layout
Figure 2. AGR26045EF Component Layout
DUT
R1
C4
+
C1
Z2
Z1
C5
Z12
RF INPUT
VGG
VDD
RF OUTPUT
Z7
FB1
C3
C2
C8
3
1
2
PINS:
1. DRAIN
2. GATE
3. SOURCE
C6
C7
C10
+
C9
Z3
Z4
Z10
Z11
Z9
C13
Z5
Z6
Z8
C13
23
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AGR26045EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR26125EU | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR26180EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR26180EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR26180EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR26125E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR26125EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR26125EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR26180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR34006827 | 制造商:LG Corporation 功能描述:Pipe Assembly,Telescopic |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。