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參數(shù)資料
| 型號(hào)： | AGR21180EF |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-4 |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 227K |
| 代理商： | AGR21180EF |
Copyright 2004 Agere Systems Inc.
All Rights Reserved
April 2004
DS04-167RFPP (Replaces DS04-124RFPP)
180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
April 2004
AGR21180EF
Preliminary Data Sheet
Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application.
Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc.
For additional information, contact your Agere Systems Account Manager or the following:
INTERNET:
http://www.agere.com
E-MAIL:
docmaster@agere.com
N. AMERICA:
Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109-9138
1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-4106)
ASIA:
Agere Systems Hong Kong Ltd., Suites 3201 & 3210-12, 32/F, Tower 2, The Gateway, Harbour City, Kowloon
Tel. (852) 3129-2000, FAX (852) 3129-2020
CHINA: (86) 21-54614688 (Shanghai), (86) 755-25881122 (Shenzhen)
JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6778-8833, TAIWAN: (886) 2-2725-5858 (Taipei)
EUROPE:
Tel. (44) 1344 296 400
ATC is a registered trademark of American Technical Ceramics Corp.
Murata is a registered trademark of Murata Electronics North America, Inc.
Sprague is a registered trademark of Sprague Electric Company Corporation.
Fair-Rite is a registered trademark of Fair-Rite Products Corporation.
Taconic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd.
RF Power Product Information
For product and application information, please visit our website: http://www.agere.com/rfpower.
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| AGR21N090EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR26045EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR26125E | 制造商:TRIQUINT 制造商全稱(chēng):TriQuint Semiconductor 功能描述:125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR26125EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR26125EU | 制造商:TRIQUINT 制造商全稱(chēng):TriQuint Semiconductor 功能描述:125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET |
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