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參數(shù)資料
| 型號(hào)： | AGR21090EF |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-2 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 225K |
| 代理商： | AGR21090EF |
Agere Systems Inc.
3
Preliminary Data Sheet
AGR21090E
April 2004
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR21090E
A. Schematic
Parts List:
s
Microstrip line: Z1 0.889 in. x 0.065 in.; Z2 0.370 in. x 0.065 in.; Z3 0.160 in. x 0.250 in.; Z4 0.080 in. x 0.400 in.; Z5 0.195 in. x 1.000 in.;
Z6 0.050 in. x 0.860 in.; Z7 0.050 in. x 0.880 in.; Z8 0.050 in. x 0.880 in.; Z9 0.180 in. x 1.060 in.; Z10 0.110 in. x 1.060 in.;
Z11 0.260 in. x 1.060 in. x 0.065 in. taper; Z12 0.195 x 0.065 in.; Z13 0.395 in. x 0.065 in.; Z14 0.555 in. x 0.065 in.
s
ATC chip capacitor: C1, C6: 8.2 pF 100B8R2JW500X; C2, C7, C13: 6.8 pF 100B6R8JW500X.
s
Sprague tantalum surface-mount chip capacitor: C3, C5, C11, C17: 22 F, 35 V.
s
Kemet 1206 size chip capacitor: C10, C16: 0.1 F C1206104K5RAC7800.
s
Murata 0805 size chip capacitor: C9, C15: 0.01 F GRM40X7R103K100AL.
s
Johanson Giga-Trim variable capacitor: C18, C19: 0.4 pF to 2.5 pF 27281SL.
s
1206 size chip capacitor: C4, C8, C14: 22000 pF.
s
1206 size chip resistor: R2 4.7
, R3 1.02 k, R4 560 k.
s
Fair-Rite ferrite bead: FB1 2743019447.
s
Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness,
εr = 3.5.
B. Component Layout
Figure 2. AGR21090E Test Circuit
DUT
R2
C4
R4
R3
+
C5
C3
+
C2
FB1
Z6
Z1
C1
Z2
Z3
Z4
Z5
Z10
Z11
Z12
Z13
C9
C8
C7
Z7
C11
C10
RF INPUT
VGG
VDD
RF
C6
C18
OUTPUT
+
1
3
2
PINS:
1. DRAIN
2. GATE
3. SOURCE
Z14
Z9
C15
C14
C13
Z8
C17
C16
+
C19
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR21090EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21125E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21125EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21125EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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