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參數(shù)資料
| 型號(hào)： | AGR21030EU |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-2 |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 300K |
| 代理商： | AGR21030EU |
Agere Systems Inc.
3
Preliminary Data Sheet
AGR21030E
May 2004
30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR21030E
A. Schematic
Parts List:
■
Microstrip line: Z1, 0.510 in. x 0.066 in.; Z2, 0.470 in. x 0.066 in.; Z3, 0.375 in. x 0.066 in. Z4, 0.280 in. x 0.540 in.; Z5, 0.570 in. x 0.050 in.;
Z6, 0.360 in. x 0.390 in.; Z7, 0.640 in. x 0.125 in.; Z8, 0.685 in. x 0.066 in.; Z9, 0.685 in. x 0.050 in.
■
ATC chip capacitor: C1, C5: 8.2 pF 100B8R2JW500X; C2, C6 6.8 pF 100B6R8JW500X.
■
Kemet capacitor: C8 0.01 F C1206104K5RAC7800; C9 0.1 F GRM40X7R103K100AL.
■
Vitramon 1206 capacitor: C3, C7: 22,000 pF.
■
Sprague tantalum capacitor: C4, C10: 22 F, 35 V.
■
Fair-Rite ferrite bead: FB1 2743019447.
■
1206 size chip resistor: R1 12
.
■
Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness,
εr = 3.5.
B. Component Layout
Figure 2. AGR21030E Test Circuit
DUT
R1
C4
+
C1
Z2
Z1
C5
Z7
Z8
RF INPUT
VGG
VDD
RF OUTPUT
Z6
Z5
FB1
C3
C2
C8
3
1
2
PINS:
1. DRAIN
2. GATE
3. SOURCE
C6
C7
C10
+
C9
Z3
Z4
Z9
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| AGR21045EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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| AGR21060EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21060EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21090E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
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