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參數(shù)資料
| 型號： | AGR19090EF |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 366K |
| 代理商： | AGR19090EF |
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90 W, 1930 MHz —1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 28 Vdc, IDQ = 800 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 10. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. POUT
Test Conditions:
VDD = 26 Vdc, IDQ = 800 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 11. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. POUT
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POUT (W) Avg.Z
G
PS
(d
B),
?
(%),
EVM
(%)
Z
-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
SP
EC
TR
AL
RE
GR
OW
TH
(d
Bc
)
EVM
GPS
600 kHz
400 kHz
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0
5
10
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25
30
35
40
45
50
0
10
20
30
40
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60
70
POUT (W) Avg.Z
G
PS
(d
B),
?
(%
),
EVM
(%
)Z
-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
SP
EC
TR
AL
RE
GR
OW
TH
(d
Bc
)Z
EVM
GPS
600 kHz
400 kHz
?
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| AGR19180EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19180EF | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19180EF | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AGR19090EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19125E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19125EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19125EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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