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參數(shù)資料
| 型號(hào)： | AGR09045EU |
| 廠商： | LSI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-2 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 221K |
| 代理商： | AGR09045EU |
Agere Systems Inc.
3
Preliminary Data Sheet
AGR09045E
October 2004
45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR09045E
A. Schematic
Parts List:
■
Microstrip line: Z1 0.670 in. x 0.066 in.; Z2 0.035 in. x 0.066 in.; Z3 0.297 in. x 0.050 in.; Z4 0.069 in. x 0.066 in.; Z5 0.538 in. x 0.066 in.;
Z6 0.050 in. x 0.150 in.; Z7 0.797 in. x 0.150 in.; Z8 0.050 in. x 0.440 in.; Z9 0.299 in. x 0.440 in.; Z10 0.050 in. x 0.440 in.;
Z11 0.050 in. x 0.440 in.; Z12 0.494 in. x 0.440 in.; Z13 1.024 in. x 0.050 in.; Z14 0.093 in. x 0.300 in.; Z15 0.050 in. x 0.300 in.;
Z16 0.214 in. x 0.300 in.; Z17 0.050 in. x 0.300 in.; Z18 0.396 in. x 0.300 in.; Z19 0.050 x 0.300; Z20 0.808 in. x 0.066 in.;
Z21 0.881 in. x 0.066 in.; Z22 2.048 in. x 0.050 in.
■
ATC chip capacitor: C1, C8, C18, C19: 47 pF, 100B470JW; C2: 3.3 pF, 100B3R3BW; C3: 5.6 pF, 100B5R6BW;
C4, C5, C6, C7: 12 pF, 100B120JW; C9, C16, C20: 10 pF, 100B100JW; C15: 1.8 pF, 100B1R8BW; C17: 6.8 pF, 100B6R8BW;
C27: 8.2 pF, 100A8R2BW.
■
1206 size 0.25 W, fixed film, chip resistors: R1: 50
, RM73B2B500J; R2: 43 k, RM73B2B433J; R3: 1 k, RM73B2B103J.
■
Murata chip capacitor: C12, C23: 0.01 F, GRM40X7R103K100AL.
■
0603 chip capacitor: C10, C21: 220 pF.
■
Sprague tantalum chip capacitor: C14, C25, C26: 22 F, 35 V.
■
Kreger ferrite bead: FB1 2743D19447.
■
Kemet chip capacitor: C13, C24: 0.10 F, C1206C104KRAC7800.
■
Vitramon chip capacitor: C11, C22: 2200 pF, VJ1206Y222KXA.
■
Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness,
εr = 3.5.
B. Component Layout
Figure 2. AGR09045E Test Circuit
DUT
C14
R1
C13
C12
FB1
Z14
Z4
C1
Z5
Z6
Z7
Z8
Z10
Z11
C22
C21
C20
C19
Z22
C25
C24
+
C23
RF INPUT
VGG
VDD
C11
C10
C9
C8
C2
C4
C6
Z12
C5
C7
Z21
C18
Z20
Z19
Z16
Z17
RF OUTPUT
C17
Z18
C16
1
2
3
PINS:
1. DRAIN
2. GATE
3. SOURCE
Z13
C26
R2
R3
++
Z9
C3
Z2
Z1
C27
Z3
Z15
C15
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相關(guān)代理商/技術(shù)參數(shù) |
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| AGR09045WEF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR09070EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR09085E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09085EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR09085EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
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