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參數(shù)資料
| 型號： | AGR09070EF |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-2 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 184K |
| 代理商： | AGR09070EF |
Preliminary Data Sheet
April 2004
AGR09070EF
70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09070EF is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for global sys-
tem for mobile communication (GSM), enhanced
data for global evolution (EDGE), and multicarrier
class AB power amplifier applications. This device is
manufactured on an advanced LDMOS technology,
offering state-of-the-art performance and reliability.
Packaged in an industry-standard package and
capable of delivering a minimum output power of
70 W, it is ideally suited for today's wireless base
station RF power amplifier applications.
Figure 1. AGR09070EF (flanged) Package
Features
s
Typical performance ratings for GSM EDGE
(f = 941 MHz, POUT = 21 W):
— Modulation spectrum:
@ ±400 kHz = –60 dBc.
@ ±600 kHz = –72 dBc.
s
Typical performance over entire GSM band:
— P1dB: 85 W typ.
— Power gain: @ P1dB = 18.25 dB.
— Efficiency @ P1dB = 56% typ.
— Return loss: –12 dB.
s
High-reliability, gold-metalization process.
s
Internally matched.
s
High gain, efficiency, and linearity.
s
Integrated ESD protection.
s
70 W minimum output power.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
Parameter
Sym
Value
Unit
Thermal Resistance,
Junction to Case:
AGR09070EF
R
θJC
0.80
°C/W
Parameter
Sym
Value
Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS –0.5, +15 Vdc
Drain Current—Continuous
ID
8.5
Adc
Total Dissipation at TC = 25 °C:
AGR09070EF
PD
219
W
Derate Above 25
°C:
AGR09070EF
—
1.25
W/°C
Operating Junction Tempera-
ture
TJ
200
°C
Storage Temperature Range
TSTG –65, +150
°C
AGR09070EF
Minimum (V)
Class
HBM
500
1B
MM
50
A
CDM
1500
4
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| AGR09085EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09085EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09085EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AGR09085E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09085EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR09085EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09090EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR09130E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET |
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