參數(shù)資料
型號(hào)： AGR09030EF
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： FM-2
文件頁(yè)數(shù)： 7/8頁(yè)
文件大小： 226K
代理商： AGR09030EF
Agere Systems Inc.
7
Preliminary Data Sheet
AGR09030E
November 2004
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR09030EU
AGR09030EF
Label Notes:
■
M before the part number denotes model program. X before the part number denotes engineering prototype.
■
The last two letters of the part number denote wafer technology and package type.
■
YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand).
XXXXX = five-digit wafer lot number.
■
ZZZZZZZ = seven-digit assembly lot number on production parts.
■
ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.
PINS:
1. DRAIN
2. GATE
3. SOURCE
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
2
3
2
1
3
AGERE
AGR09030XU
YYWWLL XXXXX
ZZZZZZZ
11
22
3
AGERE
AGR09030XF
YYWWLL XXXXX
ZZZZZZZ
相關(guān)PDF資料
PDF描述
AGR09030EU UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR09030GUM UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR09030GUM UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR09045EU UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR09045EF UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AGR09030EU 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:30 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09045E 制造商:PEAK 制造商全稱:PEAK electronics GmbH 功能描述:45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09045EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR09045EU 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09045WEF 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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