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參數(shù)資料
| 型號(hào)： | AGR09030EF |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-2 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大小： | 226K |
| 代理商： | AGR09030EF |
Agere Systems Inc.
5
Preliminary Data Sheet
AGR09030E
November 2004
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.33 A, TC = 30 °C.
IS-95 CDMA PILOT, PAGING, SYNC, TRAFFIC CODES 8—13. OFFSET 1 = 750 kHz, 30 kHz BW. OFFSET 2 = 1.98 MHz, 30 kHz BW.
Figure 4. ACPR vs. POUT
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.33 A, TC = 30 °C, WAVEFORM = CW.
Figure 5. Power Gain and Return Loss vs. Frequency
-80
-70
-60
-50
-40
-30
-20
-10
0
5
10
15
20
POUT (W)X
ACPR
(dBc)
X
ACP+
ACP-
ACP1+
ACP1-
FREQUENCY = 880 MHz
10
11
12
13
14
15
16
17
18
19
20
21
22
23
860
865
870
875
880
885
890
895
900
FREQUENCY (MHz)X
POWER
GAIN
(dB)
X
-18.0
-16.0
-14.0
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
INPUT
RET
URN
LOSS
(dB)
X
POWER GAIN
POUT = 5 W
POUT = 40 W
RETURN LOSS
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| AGR09030EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09030GUM | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09030GUM | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09045EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09045EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR09030EU | 制造商:TRIQUINT 制造商全稱(chēng):TriQuint Semiconductor 功能描述:30 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09045E | 制造商:PEAK 制造商全稱(chēng):PEAK electronics GmbH 功能描述:45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09045EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR09045EU | 制造商:TRIQUINT 制造商全稱(chēng):TriQuint Semiconductor 功能描述:45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09045WEF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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