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參數(shù)資料
| 型號(hào)： | AGR09030EF |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-2 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 226K |
| 代理商： | AGR09030EF |
2
Agere Systems Inc.
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
November 2004
AGR09030E
Preliminary Data Sheet
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0, ID =100 A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS =5 V, VDS =0V)
IGSS
—
0.95
Adc
Zero Gate Voltage Drain Leakage Current (VDS =28 V, VGS =0 V)
IDSS
——
2.9
Adc
On Characteristics
Forward Transconductance (VDS =10 V, ID =1.0 A)
GFS
—2.2
—
S
Gate Threshold Voltage (VDS =10V, ID = 400 A)
VGS(TH)
——
5.0
Vdc
Gate Quiescent Voltage (VDS =28V, IDQ = 330 mA)
VGS(Q)
—3.8
—
Vdc
Drain-source On-voltage (VGS =10V, ID = 1.0 A)
VDS(ON)
—0.35
—
Vdc
Parameter
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Input Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
CISS
—56
—
pF
Output Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
COSS
—15.7
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
CRSS
—0.73
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
(Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz)
Linear Power Gain
(VDS = 28 V, POUT = 5 W, IDQ = 330 mA)
GL
19
21
—
dB
Output Power
(VDS = 28 V, 1 dB compression, IDQ = 330 mA)
P1dB
30
40
—
W
Drain Efficiency
(VDS = 28 V, POUT = P1dB, IDQ = 330 mA)
η
—57
—
%
Third-order Intermodulation Distortion
(100 kHz spacing, VDS = 28 V, POUT = 30 WPEP, IDQ = 330 mA)
IMD
—
–31
—
dBc
Input Return Loss
IRL
—10
—
dB
Ruggedness
(VDS = 28 V, POUT = 30 W, IDQ = 330 mA, f = 880 MHz,
VSWR = 10:1, all angles)
—
No degradation in output power.
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| AGR09030EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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| AGR09030GUM | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09045EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR09030EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:30 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09045E | 制造商:PEAK 制造商全稱:PEAK electronics GmbH 功能描述:45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09045EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR09045EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09045WEF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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