Revision 13 2-3 I/O Power-Up and Supply Voltage Thresholds for Power-On Reset (Commercial and Industrial) Sophisticat" />
參數(shù)資料
型號(hào): AGLE600V2-FG256
廠商: Microsemi SoC
文件頁數(shù): 76/166頁
文件大?。?/td> 0K
描述: IC FPGA 1KB FLASH 600K 256-FBGA
標(biāo)準(zhǔn)包裝: 90
系列: IGLOOe
邏輯元件/單元數(shù): 13824
RAM 位總計(jì): 110592
輸入/輸出數(shù): 165
門數(shù): 600000
電源電壓: 1.14 V ~ 1.575 V
安裝類型: 表面貼裝
工作溫度: 0°C ~ 70°C
封裝/外殼: 256-LBGA
供應(yīng)商設(shè)備封裝: 256-FPBGA(17x17)
IGLOOe Low Power Flash FPGAs
Revision 13
2-3
I/O Power-Up and Supply Voltage Thresholds for Power-On Reset
(Commercial and Industrial)
Sophisticated power-up management circuitry is designed into every IGLOOe device. These circuits
ensure easy transition from the powered-off state to the powered-up state of the device. The many
different supplies can power up in any sequence with minimized current spikes or surges. In addition, the
I/O will be in a known state through the power-up sequence. The basic principle is shown in Figure 2-1
There are five regions to consider during power-up.
IGLOOe I/Os are activated only if ALL of the following three conditions are met:
1. VCC and VCCI are above the minimum specified trip points (Figure 2-1 on page 2-4 and
2. VCCI > VCC – 0.75 V (typical)
3. Chip is in the operating mode.
VCCI Trip Point:
Ramping up: 0.6 V < trip_point_up < 1.2 V
Ramping down: 0.5 V < trip_point_down < 1.1 V
VCC Trip Point:
Ramping up: 0.6 V < trip_point_up < 1.1 V
Ramping down: 0.5 V < trip_point_down < 1 V
VCC and VCCI ramp-up trip points are about 100 mV higher than ramp-down trip points. This specifically
built-in hysteresis prevents undesirable power-up oscillations and current surges. Note the following:
During programming, I/Os become tristated and weakly pulled up to VCCI.
Table 2-3
Flash Programming Limits – Retention, Storage, and Operating Temperature1
Product Grade
Programming
Cycles
Program Retention
(biased/unbiased)
Maximum Storage
Temperature TSTG (°C) 2
Maximum Operating Junction
Temperature TJ (°C) 2
Commercial
500
20 years
110
100
Industrial
500
20 years
110
100
Notes:
1. This is a stress rating only; functional operation at any condition other than those indicated is not implied.
2. These limits apply for program/data retention only. Refer to Table 2-1 on page 2-1 and Table 2-2 for device operating
conditions and absolute limits.
Table 2-4
Overshoot and Undershoot Limits 1, 3
VCCI
Average VCCI–GND Overshoot or Undershoot Duration
as a Percentage of Clock Cycle2
Maximum Overshoot/
Undershoot2
2.7 V or less
10%
1.4 V
5%
1.49 V
3 V
10%
1.1 V
5%
1.19 V
3.3 V
10%
0.79 V
5%
0.88 V
3.6 V
10%
0.45 V
5%
0.54 V
Notes:
1. Based on reliability requirements at junction temperature at 85°C.
2. The duration is allowed at one out of six clock cycles. If the overshoot/undershoot occurs at one out of two cycles, the
maximum overshoot/undershoot has to be reduced by 0.15 V.
3. This table does not provide PCI overshoot/undershoot limits.
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