參數(shù)資料
型號: ADS7810
英文描述: 12-Bit 800kHz Sampling CMOS ANALOG-to-DIGITAL CONVERTER
中文描述: 12位800kHz采樣CMOS模擬數(shù)字轉(zhuǎn)換器
文件頁數(shù): 3/11頁
文件大?。?/td> 208K
代理商: ADS7810
ADS7810
3
ADS7810U
ADS7810UB
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
POWER SUPPLIES
Specified Performance
+V
DIG
= +V
ANA
–V
ANA
+I
DIG
+I
ANA
–I
Derated Performance
+V
DIG
= +V
ANA
–V
ANA
Power Dissipation
+4.75
–5.25
+5
–5
+16
+16
–13
+5.25
–4.75
6
6
6
6
6
6
6
6
6
V
V
mA
mA
mA
+4.5
–5.5
+5
–5
225
+5.5
–4.5
275
6
6
6
6
6
6
6
V
V
f
S
= 800kHz
mW
TEMPERATURE RANGE
Specified Performance
Derated Performance
Storage
Thermal Resistance (
θ
JA
)
Plastic DIP
SOIC
–40
–55
–65
+85
+125
+150
6
6
°
C
°
C
°
C
6
6
75
75
6
6
°
C/W
°
C/W
6
Specification same as ADS7810U.
NOTES: (1) LSB means Least Significant Bit. For the 12-bit,
±
10V input ADS7810, one LSB is 4.88mV. (2) Typical rms noise at worst case transitions and
temperatures. (3) Measured with 50
in series with analog input. Adjustable to zero with external potentiometer. (4) Full scale error is the worst case of –Full Scale
or +Full Scale untrimmed deviation from ideal first and last code transitions, divided by the transition voltage (not divided by the full-scale range) and includes the
effect of offset error. (5) All specifications in dB are referred to a full-scale
±
10V input. (6) Usable Bandwidth defined as Full-Scale input frequency at which Signal-
to-(Noise+Distortion) degrades to 60dB, or 10 bits of accuracy. (7) Recovers to specified performance after 2 x FS input over voltage.
SPECIFICATIONS
(CONT)
ELECTRICAL
At T
A
= –40
°
C to +85
°
C, f
S
= 800kHz, +V
DIG
= +V
ANA
= +5V, –V
ANA
= –5V, using internal reference and the 50
input resistor shown in Figure 4b, unless otherwise specified.
ABSOLUTE MAXIMUM RATINGS
Analog Inputs: V
..............................................................................
±
25V
REF .................................... +V
+0.3V to AGND2 –0.3V
CAP ...........................................Indefinite Short to AGND2
Momentary Short to +V
ANA
Ground Voltage Differences: DGND, AGND1, AGND2 ...................
±
0.3V
+V
ANA
...................................................................................................+7V
+V
DIG
to +V
.................................................................................+0.3V
+V
DIG
..................................................................................................... 7V
–V
................................................................................................... –7V
Digital Inputs ............................................................ –0.3V to +V
+0.3V
Maximum Junction Temperature ................................................... +165
°
C
Internal Power Dissipation ............................................................. 825mW
Lead Temperature (soldering, 10s)................................................ +300
°
C
MINIMUM
SIGNAL-TO-
(NOISE +
DISTORTION)
RATIO (dB)
MAXIMUM
INTEGRAL
LINEARITY
ERROR (LSB)
SPECIFICATION
TEMPERATURE
RANGE
PACKAGE DRAWING
NUMBER
(1)
PRODUCT
PACKAGE
ADS7810U
ADS7810UB
±
1
67
69
–40
°
C to +85
°
C
–40
°
C to +85
°
C
28-Pin SOIC
28-Pin SOIC
217
217
±
0.75
NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book.
ORDERING/PACKAGE INFORMATION
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
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