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參數(shù)資料
| 型號(hào)： | ADP3522ACP-1.8 |
| 廠(chǎng)商： | ANALOG DEVICES INC |
| 元件分類(lèi)： | 電源管理 |
| 英文描述： | GSM Power Management System |
| 中文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, QCC32 |
| 封裝： | 5 X 5 MM, EXPOSED PAD, MO-220-VHHD-2, LFCSP-32 |
| 文件頁(yè)數(shù)： | 7/20頁(yè) |
| 文件大?。?/td> | 467K |
| 代理商： | ADP3522ACP-1.8 |
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REV. 0
Typical Performance Characteristics–ADP3522
–7–
VBAT – V
450
400
350
300
250
200
150
100
3.0
3.5
4.0
4.5
5.0
5.5
I
G
50
0
ALL LDO, MVBAT, REFOUT,
ON_MIN_LOAD (SIMEN = H,
TCXOEN = H)
VCORE, VMEM, VRTC,
ON_MIN_LOAD (SIMEN = L,
TCXOEN = L)
VSIM, VCORE, VMEM, VRTC,
ON_MIN_LOAD (SIMEN = H,
TCXOEN = L)
TPC 1. Ground Current vs.
Battery Voltage
LOAD CURRENT – mA
180
160
140
120
0
D
0
50
100
150
200
VMEM
VAN
VTCXO
VSIM
100
80
60
40
20
TPC 4. Dropout Voltage vs.
Load Current
VBAT
VAN
VCORE
10mV/DIV
10mV/DIV
3.2
3.0
TIME – 100 s/DIV
VSIM
10mV/DIV
TPC 7. Line Transient
Response, Minimum Loads
VRTC – V
10000
1000
100
10
I
0
0.5
1.0
1.5
2.0
+85 C
+25 C
–20 C
TPC 2. RTC I/V Characteristic
VBAT
VTCXO
VMEM
10mV/DIV
10mV/DIV
3.2
3.0
TIME – 100 s/DIV
TPC 5. Line Transient
Response, Minimum Loads
VBAT
VCORE
VSIM
10mV/DIV
10mV/DIV
3.2
3.0
VAN
10mV/DIV
TIME – 100 s/DIV
TPC 8. Line Transient
Response, Maximum Loads
RTC REVERSE LEAKAGE
(VBAT = 2.3V)
RTC REVERSE LEAKAGE
(VBAT = FLOAT)
TEMPERATURE – C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
R
25 30 35 40 45 50 55 60 65 70 75 80 85
TPC 3. VRTC Reverse Leakage
Current vs. Temperature
VBAT
VTCXO
VMEM
10mV/DIV
10mV/DIV
3.2
3.0
TIME – 100 s/DIV
TPC 6. Line Transient
Response, Maximum Loads
LOAD
20mA
VTCXO
10mV/DIV
2mA
TIME – 200 s/DIV
TPC 9. VTCXO Load Step
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ADP3522ACP-3 | 制造商:AD 制造商全稱(chēng):Analog Devices 功能描述:GSM Power Management System |
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