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參數(shù)資料
| 型號： | ADP3510 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.40V) 8-SM8 -40 to 110 |
| 中文描述： | CDMA的電源管理系統(tǒng) |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 283K |
| 代理商： | ADP3510 |
REV. 0
ADP3510
–8–
VBAT – V
400
350
300
250
200
3.0
3.5
4.0
4.5
5.0
5.5
I
G
VIO, VCORE, VMEM,
VRTC, VAN, REFOUT ON,
MIN LOAD (TCXOEN = L)
ALL LDO, MVBAT, REFOUT ON,
MIN LOAD (TCXOEN = H)
TPC 1. Ground Current
vs. Battery Voltage
RTC REVERSE LEAKAGE
(VBAT = 2.3V)
RTC REVERSE LEAKAGE
(VBAT = FLOAT)
TEMPERATURE – C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
R
25 30 35 40 45 50 55 60 65 70 75 80 85
TPC 4. VTRC Reverse Leakage
Current vs. Temperature
TIME
100
s
/DIV
VBAT
3.5V
3.3V
10mV/DIV
10mV/DIV
VMEM
VTCXO
TPC 7. Line Transient Response,
Maximum Loads
40
0
20
TEMPERATURE – C
20
40
60
80
100 120
I
G
300
250
200
350
400
ALL LDO, MVBAT, REFOUT,
ON MIN LOAD (TCXOEN = H)
VIO, VCORE, VMEM, VRTC, VAN,
REFOUT, ON MIN LOAD (TCXOEN = L)
TPC 2. Ground Current
vs. Temperature
LOAD CURRENT – mA
180
160
140
120
100
80
60
40
20
0
D
0
20
40
60
80
VTCXO
VSIM
VMEM
TPC 5. Dropout Voltage
vs. Load Current
10mV/DIV
TIME
100
s
/DIV
VBAT
VAN
VCORE
VIO
10mV/DIV
2mV/DIV
3.5V
3.3V
TPC 8. Line Transient Response,
Minimum Loads
VRTC – V
160
10
2.0
2.7
2.9
I
V
140
120
100
80
60
40
20
2.1
2.2
2.3
2.4
2.5
2.6
2.8
+85 C
+25 C
–20 C
TPC 3. RTC I/V Characteristic
3.5V
3.3V
TIME
100
s
/DIV
10mV/DIV
VTCXO
VBAT
VMEM
10mV/DIV
TPC 6. Line Transient Response,
Minimum Loads
TIME
100
s
/DIV
VIO
VAN
VCORE
VBAT
10mV/DIV
2mV/DIV
10mV/DIV
3.5V
3.3V
TPC 9. Line Transient Response,
Maximum Loads
—Typical Performance Characteristics
(VBAT = 3.6 V, T
A
= 25 C, unless otherwise specified.)
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PDF描述 |
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| ADP3510ARU | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.40V) 8-SM8 -40 to 110 |
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|---|---|
| ADP3510ARU | 制造商:AD 制造商全稱:Analog Devices 功能描述:CDMA Power Management System |
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| ADP3522ACP-1.8 | 制造商:AD 制造商全稱:Analog Devices 功能描述:GSM Power Management System |
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