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參數(shù)資料
| 型號(hào)： | ADN2820S21 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | 10.7 Gbps, 3.3V, Low Noise, TIA with Average Power Moniter |
| 中文描述： | 10.7 Gbps的，3.3，低噪聲，與平均功率監(jiān)視器行業(yè)協(xié)會(huì) |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 786K |
| 代理商： | ADN2820S21 |
ADN2820
SPECIFICATIONS
Table 1. Electrical Specifications
Parameter
DYNAMIC PERFORMANCE
Bandwidth
1, 2
Total Input RMS Noise
1, 2
Small Signal Transimpedance
Transimpedance Ripple
2
Group Delay Variation
2
Total Peak-to-Peak Jitter
2, 3
Low Frequency Cutoff
S22
Linear Input Range
Input Overload Current
1, 2
Maximum Output Swing
DC PERFORMANCE
Power Dissipation
Input Voltage
Output Common-Mode Voltage
Output Offset
Offset Adjust Sensitivity
Offset Adjust Range
POWMON Sensitivity
POWMON Offset
Rev. 0 | Page 3 of 12
Conditions
1
–3 dB
DC to 10 GHz
100 MHz
100 MHz to 3 GHz
100 MHz to 3 GHz
100 MHz to 9 GHz
I
IN,P-P
= 2.5 mA
C
LF
= 0.1 μF
DC – 10 GHz, differential
Peak-to-peak, <1 dB compression
ER = 10 dB
ER = 4 dB
Differential, I
IN P-P
= 2.0 mA
DC terminated to V
CC
I
IN, AVE
< 0.1 mA
See Figure 3
See Figure 3
I
IN, AVE
= 10 μA to 1 mA
I
IN, AVE
= 0 μA
Min
7.5
4000
1.4
1.0
0.88
147
0.75
–20
0.76
Typ
9
1.0
5000
±0.5
±10
±30
17
12
–10
0.15
2.8
1.9
1.1
200
0.85
V
CC
– 0.3
±3
120
240
1
20
Max
6000
264
0.93
+20
1.2
Unit
GHz
μA
V/A
dB
ps
ps
ps
kHz
dB
mA
mA p-p
mA p-p
V p-p
mW
V
V
mV
mV/V
mV
V/mA
mV
1
Min/Max V
CC
= 3.3 V
±
0.3 V, T
AMBIENT
= –15°C to +85°C; Typ V
CC
= 3.3 V, T
AMBIENT
= 25°C.
2
Photodiode capacitance C
D
= 0.22 pF
±
0.04 pF; photodiode resistance = 20 ; C
B
= C
F
= 100 pF; R
F
= 100 ; input wire bond inductance L
IN
= 0.5 nH
±
0.15 nH; output
bond wire inductance L
OUT, OUTB
= 0.85 nH
±
0.15 nH; load impedance = 50 (each output, dc- or ac-coupled).
3
10
–12
BER, 8 dB extinction ratio, 0.85 A/W PIN responsivity.
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