參數(shù)資料
型號(hào): ADN2820S21
廠商: Analog Devices, Inc.
英文描述: 10.7 Gbps, 3.3V, Low Noise, TIA with Average Power Moniter
中文描述: 10.7 Gbps的,3.3,低噪聲,與平均功率監(jiān)視器行業(yè)協(xié)會(huì)
文件頁(yè)數(shù): 10/12頁(yè)
文件大?。?/td> 786K
代理商: ADN2820S21
ADN2820
BANDWIDTH VERSUS INPUT BOND WIRE
INDUCTANCE
The ADN2820’s –3 dB bandwidth (BW) is a strong function of
input (IN) bond wire inductance (L
IN
). The maximum BW
peaks near and falls rapidly after the resonant frequency of the
input bond wire inductance and photodiode capacitance
(C
D
) ~ 1/(2π × √(L
IN
× C
D
)).
Rev. 0 | Page 10 of 12
Table 6. Simulated ADN2820 –3 dB BW vs. L
IN
L
IN
(nH)
–3 dB Bandwidth (GHz)
0
7.4
1
9.0
2
7.8
3
7.0
66
67
68
69
70
71
72
73
74
75
76
S
T
)
FREQUENCY (GHz)
1
0.1
10
100
0
0nH
1nH
2nH
3nH
Figure 17. Simulated Differential Transimpedance (dB) vs. Frequency (Hz)
with 0 nH, 1 nH, 2 nH, and 3 nH L
IN
Inductance
Note: L
OUT
, L
OUTB
= 1 nH, C
D
= 0.22 pF.
Recommendation: L
IN
× C
D
= 1 nH × 0.22 pF.
BANDWIDTH VERSUS OUTPUT BOND WIRE
INDUCTANCE
The ADN2820 –3 dB bandwidth (BW) depends strongly on the
output (OUT, OUTB) inductance values (L
OUT
, L
OUTB
). With
output inductance greater than 2 nH, the BW is dominated by
the output L
OUT
, L
OUTB
/(R
O
+ R
L
) settling time constant, where
R
O
= R
L
= 50 Ω are the nominal single-ended output resistance
and load impedance.
Table 7. Simulated ADN2820 –3 dB BW vs L
OUT
, L
OUTB
L
OUT
, L
OUTB
(nH)
0
1
2
3
–3 dB Bandwidth (GHz)
9.1
9.0
7.5
5.9
66
67
68
69
70
71
72
73
74
75
76
S
T
)
FREQUENCY (GHz)
1
0.1
10
100
0
3nH
0nH
1nH
2nH
Figure 18. Simulated Differential Transimpedance (dB) vs. Frequency (Hz)
with 0 nH, 1 nH, 2 nH, and 3 nH L
OUT
, L
OUTB
inductance
Note: L
IN
= 1 nH, C
D
= 0.22 pF.
Recommendation: L
OUT
, L
OUTB
≤ 1 nH
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