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參數(shù)資料
| 型號(hào)： | ADL5372ACPZ-R2 |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 調(diào)制器/解調(diào)器 |
| 英文描述： | 1500 MHz - 2500 MHz RF/MICROWAVE QUADRAPHASE MODULATOR |
| 封裝： | LEAD FREE, MO-220VGGD-2, LFCSP-24 |
| 文件頁(yè)數(shù)： | 7/24頁(yè) |
| 文件大小： | 802K |
| 代理商： | ADL5372ACPZ-R2 |
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ADL5372
Rev. 0 | Page 15 of 24
An example is shown in Figure 32 with a third-order, elliptical,
low-pass filter with a 3 dB frequency of 3 MHz. Matching input
and output impedances makes the filter design easier, so the
shunt resistor chosen is 100 Ω, producing an ac swing of
1 V p-p differential.
RBIP
50
RBIN
50
93
92
19
20
IBBN
IBBP
AD9779
F-MOD
RBQN
50
RBQP
50
84
83
23
24
RSLI
100
RSLQ
100
OUT1_N
OUT1_P
OUT2_P
OUT2_N
QBBP
QBBN
LPI
2.7nH
LNI
2.7nH
1.1nF
C1I
1.1nF
C2I
LNQ
2.7nH
LPQ
2.7nH
1.1nF
C1Q
1.1nF
C2Q
06
51
1-
0
32
Figure 32. DAC Modulator Interface with
3 MHz Third-Order, Elliptical Low-Pass Filter
USING THE AD9779 AUXILIARY DAC FOR CARRIER
FEEDTHROUGH NULLING
The AD9779 features an auxiliary DAC that can be used to
inject small currents into the differential outputs for each main
DAC channel. This feature can be used to produce the small
offset voltages necessary to null out the carrier feedthrough
from the modulator. Figure 33 shows the interface required
to use the auxiliary DACs. This adds four resistors to the
interface.
RBIP
50
RBIN
50
93
90
92
19
20
IBBN
IBBP
AD9779
F-MOD
RBQN
50
RBQP
50
84
87
89
83
86
23
24
RSLI
100
RSLQ
100
OUT1_N
AUX1_N
AUX2_N
OUT1_P
AUX1_P
OUT2_P
AUX2_P
OUT2_N
QBBP
QBBN
LPI
2.7nH
LNI
2.7nH
1.1nF
C1I
1.1nF
C2I
LNQ
2.7nH
LPQ
2.7nH
1.1nF
C1Q
1.1nF
C2Q
250
500
250
06
51
1-
03
3
Figure 33. DAC Modulator Interface with Auxiliary DAC Resistors
GSM OPERATION
Figure 34 shows the GSM EVM, spectral mask, and noise vs. the
output power for the ADL5372 at 1960 MHz. For a given LO
amplitude, the performance is independent of output power.
06
51
1-
02
6
OUTPUT POWER (dBm)
250k
H
z,
400kHz
,6
00kHz
AND
1200kHz
S
P
E
C
T
RAL
M
A
S
K
(d
Bc/
30
kH
z)
6M
Hz
O
F
S
E
T
NO
IS
E
F
L
O
R
(
d
Bc/
100
kH
z)
–110
–100
–90
–80
–70
–60
–50
–40
–30
–6
–4
–2
0
2
4
6
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
P
E
A
K
AND
RM
S
E
V
M
(%
)
6 MHz NOISE FLOOR
1.2MHz
PEAK EVM
600kHz
400kHz
250kHz
RMS EVM
Figure 34. GSM EVM and Spectral Performance vs. Channel Power at
1960 MHz vs. Output Power; LO Power = 0 dBm
Figure 35 shows the GSM EVM and noise performance vs. the
LO amplitude at 1960 MHz with an output power of 5 dBm.
Increasing the LO drive level improves the noise performance
but degrades EVM performance.
06
51
1-
02
7
LO DRIVE (dBm)
P
E
AK
AN
D
RM
S
E
V
M
(
%
)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
–6
–4
–2
0
2
4
6
–120
–115
–110
–105
–100
–95
–90
–85
–80
6M
Hz
O
F
S
E
T
NO
IS
E
F
L
O
R
(
d
Bc/
100k
H
z)
6MHz NOISE FLOOR
RMS EVM
PEAK EVM
Figure 35. GSM EVM and 6 MHz Noise Floor vs. LO Power at 1960 MHz;
Output Power = 5 dBm
Figure 35 illustrates that an LO amplitude of 3 dBm provides
the ideal operating point for noise and EVM for a GSM signal
at 1960 MHz.
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