AD5530/AD5531
Rev. B | Page 6 of 20
DAISY-CHAINING AND READBACK TIMING CHARACTERISTICS
VDD = 10.8 V to 16.5 V, VSS = 10.8 V to 16.5 V; GND = 0 V; RL = 5 kΩ and CL = 220 pF to GND. All specifications TMIN to TMAX, unless
otherwise noted.
Table 5.
Limit at TMIN, TMAX
Unit
Description
fMAX
2
MHz max
SCLK frequency
t1
500
ns min
SCLK cycle time
t2
200
ns min
SCLK low time
t3
200
ns min
SCLK high time
t4
50
ns min
SYNC to SCLK falling edge setup time
t5
40
ns min
SCLK falling edge to SYNC rising edge
t6
50
ns min
Min SYNC high time
t7
40
ns min
Data setup time
t8
15
ns min
Data hold time
t12
50
ns min
CLR pulse width
t13
130
ns min
SCLK falling edge to SDO valid
t14
50
ns max
SCLK falling edge to SDO invalid
t15
50
ns min
RBEN to SCLK falling edge setup time
t16
50
ns min
RBEN hold time
t17
100
ns min
RBEN falling edge to SDO valid
1 Guaranteed by design, not subject to production test.
2 Sample tested during initial release and after any redesign or process change that can affect this parameter. All input signals are measured with tR = tF = 5 ns (10% to
90% of VDD) and timed from a voltage level of (VIL + VIH)/2.
3 SDO; RPULLUP = 5 kΩ, CL = 15 pF
00938-
003
SCLK
SYNC
SDIN
SDO
(DAISY-
CHAINING)
RBEN
SDO
(READBACK)
MSB
DB15
DB14
DB11
DB0
DB15
DB11
DB0
LSB
MSB
LSB
MSB
LSB
RB0
RB13
00
t1
t3
t2
t5
t4
t6
t7
t8
t13
t14
t15
t16
t13
t14
t17
Figure 3. Timing Diagram for Daisy-Chaining and Readback Mode