參數(shù)資料
型號： AAT9125IAS-T1
廠商： Advanced Analogic Technologies, Inc.
英文描述： 30V N-Channel Power MOSFET
中文描述： 30V的N溝道功率MOSFET
文件頁數(shù)： 2/4頁
文件大?。?/td> 255K
代理商： AAT9125IAS-T1
Electrical Characteristics
(T
J
=25°C unless otherwise noted)
Note 2: Pulse test: Pulse Width = 300μs
Note 3: Guaranteed by design. Not subjected to production testing.
Symbol
DC Characteristics
BV
DSS
Description
Conditions
Min
Typ
Max
Units
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=250μA
30
V
R
DS(ON)
Drain-Source ON-Resistance
2
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=10A
V
GS
=10V ,V
DS
=5V (Pulsed)
V
GS
=V
DS
, I
D
=250μA
V
GS
=±20V, V
DS
=0V
V
GS
=0V,V
DS
=30V
V
GS
=0V,V
DS
=30V, T
J
=55°C
V
DS
=15V, I
D
=12.5A
7.5
11.5
9
14
m
I
D(ON)
V
GS(th)
I
GSS
On-State Drain Current
2
Gate Threshold Voltage
Gate-Body Leakage Current
52
1.0
A
V
nA
±100
1
5
I
DSS
Drain Source Leakage Current
μA
g
fs
Forward Transconductance
2
Dynamic Characteristics
3
Q
G
Total Gate Charge
Q
GT
Total Gate Charge
Q
GS
Gate-Source Charge
Q
GD
Gate-Drain Charge
t
D(ON)
Turn-ON Delay
t
R
Turn-ON Rise Time
t
D(OFF)
Turn-OFF Delay
t
F
Turn-OFF Fall Time
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
2
I
S
Continuous Diode Current
30
S
V
DS
=15V, I
D
=12.5A, V
GS
=5V
V
DS
=15V, I
D
=12.5A, V
GS
=10V
V
DS
=15V, I
D
=12.5A, V
GS
=10V
V
DS
=15V, I
D
=12.5A, V
GS
=10V
V
DD
=15V, V
GS
=10V, R
D
=1.2
,
G
=6
V
DD
=15V, V
GS
=10V, R
D
=1.2
, R
G
=6
V
DD
=15V, V
GS
=10V, R
D
=1.2
, R
G
=6
V
DD
=15V, V
GS
=10V, R
D
=1.2
, R
G
=6
31
60
10
9
20
14
100
38
50
100
nC
nC
nC
nC
ns
ns
ns
ns
35
30
160
80
V
GS
=0, I
S
=2.25A
T
A
=25oC
1.1
2.25
V
A
AAT9125
30V N-Channel Power MOSFET
2
9125.2001.12.0.9
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