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參數資料
| 型號： | AAT9460IGY-T1 |
| 廠商： | Advanced Analogic Technologies, Inc. |
| 英文描述： | 30V N-Channel Power MOSFET |
| 中文描述： | 30V的N溝道功率MOSFET |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 145K |
| 代理商： | AAT9460IGY-T1 |
AAT9460
30V N-Channel Power MOSFET
P
9460.2003.10.0.63
1
General Description
The AAT9460 is a low threshold MOSFET designed
for applications in DC-DC Converter, battery, cell
phone, and PDA markets. Using AnalogicTech's
ultra-high density proprietary TrenchDMOS tech-
nology, this product demonstrates high power han-
dling and small size.
Applications
DC-DC Converters
Battery Packs
Cellular & Cordless Telephones
Battery-powered portable equipment
Features
V
DS(MAX)
= 30V
I
D(MAX)
Low R
DS(ON)
:
58 m
@ V
GS
= 4.5V
84 m
@ V
GS
= 2.5V
1
= 3.4A @ 25°C
SC59 Package
D
G
S
Top View
1
2
3
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted)
Thermal Characteristics
Symbol
Description
Value
Units
R
θ
JA
R
θ
JA2
R
θ
JF
Typical Junction-to-Ambient steady state
1
Maximum Junction-to-Ambient t<5 seconds
1
Typical Junction-to-Foot
1
140
115
45
°C/W
Symbol
Description
Value
Units
V
DS
V
GS
Drain-Source Voltage
Gate-Source Voltage
30
±12
±3.4
±2.7
±8.0
1.0
1.1
0.7
V
I
D
Continuous Drain Current @ T
J
=150°C
1
T
A
= 25°C
T
A
= 70°C
A
I
DM
I
S
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
1
P
D
Maximum Power Dissipation
1
T
A
= 25°C
T
A
= 70°C
W
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
°C
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