參數(shù)資料
型號(hào)： AAT9125IAS-T1
廠商： Advanced Analogic Technologies, Inc.
英文描述： 30V N-Channel Power MOSFET
中文描述： 30V的N溝道功率MOSFET
文件頁數(shù)： 1/4頁
文件大?。?/td> 255K
代理商： AAT9125IAS-T1
General Description
The AAT9125 30V N-Channel Power MOSFET is a
member of AnalogicTech's TrenchDMOS prod-
uct family. Using the ultra-high density proprietary
TrenchDMOS technology, this product demon-
strates high power handling and small size.
Applications
DC-DC converters for mobile CPUs
Battery-powered portable equipment
High power density switch-mode supplies
Point-of-use Power Supplies
Features
V
DS(MAX)
= 30V
I
D(MAX)
= 12.5A @ 25°C
Low R
DS(ON)
:
9 m
@V
GS
= 10V
14 m
@ V
GS
= 4.5V
SOP8 Package
D
8
D
7
D
6
D
5
S
S
S
G
Top View
1
2
3
4
AAT9125
30V N-Channel Power MOSFET
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted)
Thermal Characteristics
Note 1: Mounted on 1” x 1” FR4 Copper Board, 10 sec pulse width
Symbol
R
θ
JA
R
θ
JC
Description
Typical Junction-to-Ambient
1
Typical Junction-to-Case
Value
50
25
Units
°C/W
°C/W
Symbol
V
DS
V
GS
Description
Drain-Source Voltage
Gate-Source Voltage
Value
30
±20
±12.5
±10
±52
2.25
2.5
1.6
-55 to 150
Units
V
I
D
Continuous Drain Current @ T
J
=150°C
1
T
A
= 25°C
T
A
= 70°C
A
I
DM
I
S
Pulsed Drain Current
Continuous Source Current (Source-Drain Diode)
1
P
D
Maximum Power Dissipation
1
T
A
= 25°C
T
A
= 70°C
W
T
J
, T
STG
Operating Junction and Storage Temperature Range
°C
P
9125.2001.12.0.9
1
PWMSwitch
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