參數(shù)資料
型號(hào): AAT7357
廠商: Advanced Analogic Technologies, Inc.
英文描述: RAC30-SA(-E)(-ST) Series - Powerline Regulated AC-DC Converters; Output Voltage (Vdc): 24V; Features: AC-DC Power Supply; 30 Watt PCB Mount Package; Universal Input Voltage Range; 3000VAC Isolation; Low Output Ripple and Noise; Short Circuit Protected; UL Certified
中文描述: 20V的P溝道功率MOSFET
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 207K
代理商: AAT7357
Electrical Characteristics
(T
J
=25°C unless otherwise noted)
Notes:
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
θ
JF
+ R
θ
FA
= R
θ
JA
where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
θ
JF
is guaranteed by design, however
R
θ
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300 μs
3. Guaranteed by design. Not subject to production testing.
Symbol
Description
Conditions
Min
Typ
Max
Units
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250μA
V
GS
=-4.5V, I
D
=-5A
V
GS
=-2.5V, I
D
=-4A
V
GS
=-4.5V, V
DS
=-5V (Pulsed)
V
GS
=V
DS
, I
D
=-250μA
V
GS
=±12V, V
DS
=0V
V
GS
=0V, V
DS
=-20V
V
GS
=0V, V
DS
=-16V, T
J
=70°C
3
V
DS
=-5V, I
D
=-5A
-20
V
R
DS(ON)
Drain-Source ON-Resistance
2
30
49
39
63
m
I
D(ON)
V
GS(th)
I
GSS
On-State Drain Current
2
Gate Threshold Voltage
Gate-Body Leakage Current
-12
-0.6
A
V
nA
±100
-1
-5
I
DSS
Drain Source Leakage Current
μA
g
fs
Forward Transconductance
2
Dynamic Characteristics
3
Q
G
Total Gate Charge
Q
GS
Gate-Source Charge
Q
GD
Gate-Drain Charge
t
D(ON)
Turn-ON Delay
t
R
Turn-ON Rise Time
t
D(OFF)
Turn-OFF Delay
t
F
Turn-OFF Fall Time
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
2
I
S
Continuous Diode Current
1
12
S
V
DS
=-10V, R
D
=2.0
, V
GS
=-4.5V
V
DS
=-10V, R
D
=2.0
, V
GS
=-4.5V
V
DS
=-10V, R
D
=2.0
, V
GS
=-4.5V
V
DS
=-10V, R
D
=2.0
, V
GS
=-4.5V, R
G
=6
V
DS
=-10V, R
D
=2.0
, V
GS
=-4.5V, R
G
=6
V
DS
=-10V, R
D
=2.0
, V
GS
=-4.5V, R
G
=6
V
DS
=-10V, R
D
=2.0
, V
GS
=-4.5V, R
G
=6
14
3.5
5.6
TBD
TBD
TBD
TBD
nC
ns
V
GS
=0, I
S
=-5A
-1.2
-1.3
V
A
AAT7357
20V P-Channel Power MOSFET
2
7357.2003.08.0.6
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